[논문]An extended application of β-Ga2O3 single crystals to the laser field: Cr4+:β-Ga2O3 utilized as a new promising saturable absorber

Mu, Wenxiang; Yin, Yanru; Jia, Zhitai; Wang, Lijuan; Sun, Jie; Wang, Mengxia; Tang, Cheng; Hu, Qiangqiang; Gao, Zeliang; Zhang, Jian; Lin, Na; Veronesi, Stefano; Wang, Zhengping; Zhao, Xian; Tao, Xutang

doi:10.1039/c7ra01905j

An extended application of β-Ga2O3 single crystals to the laser field: Cr4+:β-Ga2O3 utilized as a new promising saturable absorber 원문보기

RSC advances, v.7 no.35, 2017년, pp.21815 - 21819

Mu, Wenxiang (State Key Laboratory of Crystal Materials) , Yin, Yanru (State Key Laboratory of Crystal Materials) , Jia, Zhitai (State Key Laboratory of Crystal Materials) , Wang, Lijuan (State Key Laboratory of Crystal Materials) , Sun, Jie (State Key Laboratory of Crystal Materials) , Wang, Mengxia (State Key Laboratory of Crystal Materials) , Tang, Cheng (State Key Laboratory of Crystal Materials) , Hu, Qiangqiang (State Key Laboratory of Crystal Materials) , Gao, Zeliang (State Key Laboratory of Crystal Materials) , Zhang, Jian (State Key Laboratory of Crystal Materials) , Lin, Na (State Key Laboratory of Crystal Materials) , Veronesi, Stefano (NEST Istituto di Nanoscienze CNR) , Wang, Zhengping (State Key Laboratory of Crystal Materials) , Zhao, Xian (State Key Laboratory of Crystal Materials) , Tao, Xutang (State Key Laboratory of Crystal Materials)

Abstract ▼ AI-Helper

Considering their easy growth and doping in bulk crystal growth, and good crystalline quality, β-Ga2O3 single crystals, a very important wide-bandgap semiconductor, are now also considered to be a promising optical crystal candidate. In this work, a Cr4+:β-Ga2O3 single crystal has been grown successfully by the edge-defined film-fed growth method. The thermal conductivity of Cr4+:β-Ga2O3 has been measured along the a* direction at room temperature obtaining 16.2 W m−1 K−1, and it was much larger than that of the usually used Cr4+-doped crystals, such as Y3Al5O12 (YAG) or YVO4. The Raman spectrum indicated that the cutoff phonon energy of the β-Ga2O3 crystal was 767.8 cm−1. A passively Q-switched nanosecond pulsed Nd:YAG laser based on a Cr4+:β-Ga2O3 saturable absorber was experimentally demonstrated for the first time to our knowledge and its mechanism is explained by first-principles calculations. By inserting the Cr4+:β-Ga2O3 crystal into the Nd:YAG laser cavity, a Q-switched laser operation was obtained with a maximum average output power of 50 mW. The corresponding pulse repetition rate, pulse width, and pulse energy were determined to be of 421.5 kHz, 235.2 ns and 0.12 μJ, respectively.

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An extended application of β-Ga2O3 single crystals to the laser field: Cr4+:β-Ga2O3 utilized as a new promising saturable absorber 원문보기

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