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New Structural Design of Gated Lateral Bipolar Junction Transistor for Sensor Applications

IEEE transactions on electron devices, v.65 no.1, 2018년, pp.243 - 250  

Jeong, Hyun-Min (School ofElectronics Engineering, College of IT Engineering, Kyungpook National University, Daegu, South Korea) ,  Kwon, Jin-Beom (School ofElectronics Engineering, College of IT Engineering, Kyungpook National University, Daegu, South Korea) ,  Kwon, Hyurk-Choon (School ofElectronics Engineering, College of IT Engineering, Kyungpook National University, Daegu, South Korea) ,  Kim, Ju-Seong (School ofElectronics Engineering, College of IT Engineering, Kyungpook National University, Daegu, South Korea) ,  Xu, Binrui (School ofElectronics Engineering, College of IT Engineering, Kyungpook National University, Daegu, South Korea) ,  Kwon, Dae-Hyuk (Department of Electronic Engineering, Kyungil University, Kyungsan, South Korea) ,  Kang, Shin-Won (School ofElectronics Engineering, College of IT Engineering, Kyungpook National University, Daegu, South Korea)

Abstract AI-Helper 아이콘AI-Helper

In this paper, we propose a gated lateral bipolar junction transistor (GLBJT) that has a cascade structure, resulting in improved sensing performance over conventional GLBJTs. The device can be operated in bipolar junction transistor (BJT) mode, metal–oxide–semiconductor field-effect t...

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