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NTIS 바로가기IEEE transactions on electron devices, v.65 no.1, 2018년, pp.243 - 250
Jeong, Hyun-Min (School ofElectronics Engineering, College of IT Engineering, Kyungpook National University, Daegu, South Korea) , Kwon, Jin-Beom (School ofElectronics Engineering, College of IT Engineering, Kyungpook National University, Daegu, South Korea) , Kwon, Hyurk-Choon (School ofElectronics Engineering, College of IT Engineering, Kyungpook National University, Daegu, South Korea) , Kim, Ju-Seong (School ofElectronics Engineering, College of IT Engineering, Kyungpook National University, Daegu, South Korea) , Xu, Binrui (School ofElectronics Engineering, College of IT Engineering, Kyungpook National University, Daegu, South Korea) , Kwon, Dae-Hyuk (Department of Electronic Engineering, Kyungil University, Kyungsan, South Korea) , Kang, Shin-Won (School ofElectronics Engineering, College of IT Engineering, Kyungpook National University, Daegu, South Korea)
In this paper, we propose a gated lateral bipolar junction transistor (GLBJT) that has a cascade structure, resulting in improved sensing performance over conventional GLBJTs. The device can be operated in bipolar junction transistor (BJT) mode, metal–oxide–semiconductor field-effect t...
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The Characteristics of
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