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NTIS 바로가기AIP advances, v.2 no.3, 2012년, pp.032111 -
Lu, Li (Nara Institute of Science and Technology 1 Graduate School of Materials Science, , 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan) , Echizen, Masahiro (Nara Institute of Science and Technology 1 Graduate School of Materials Science, , 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan) , Nishida, Takashi (Nara Institute of Science and Technology 1 Graduate School of Materials Science, , 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan) , Ishikawa, Yasuaki (Nara Institute of Science and Technology 1 Graduate School of Materials Science, , 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan) , Uchiyama, Kiyoshi (Tsuruoka National College of Technology 3 , 104 Inooka Sawada, Tsuruoka, Yamagata 997-8511, Japan) , Uraoka, Yukiharu (Nara Institute of Science and Technology 1 Graduate School of Materials Science, , 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan)
Assisted by UV/O3 annealing, InZnO thin-film transistors (TFTs) fabricated at a low temperature of 290°C showed a high field-effect mobility of 2.19 cm2/(V·s). This value was almost the same as that of InZnO TFTs annealed at 700°C without UV/O3 assistance. Si ions in the substrate wer...
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