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NTIS 바로가기Microelectronic engineering, v.191, 2018년, pp.66 - 71
Woo, Sola (Corresponding author.) , Kim, Minsuk , Kim, Sangsig
Abstract In this study, we propose a precise model of silicon tunneling field-effect transistors (TFETs) by modifying the Kane-Sze tunneling formula. In our model, a reference device is calibrated by utilizing TCAD and SPICE simulation. Electrical parameters extracted in our TCAD simulation are app...
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