최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기Langmuir : the ACS journal of surfaces and colloids, v.34 no.8, 2018년, pp.2882 - 2889
Qian, Qingkai , Zhang, Zhaofu , Chen, Kevin J.
Surface functionalization of the dangling-bond-free MoS2, WSe2, and other TMDs (transition metal dichalcogenides) is of large practical importance, for example, in providing nucleation sites for the subsequent high-k dielectric integration. Of the surface functionalization methods, the reversible O ...
Xu, Mingsheng, Liang, Tao, Shi, Minmin, Chen, Hongzheng. Graphene-Like Two-Dimensional Materials. Chemical reviews, vol.113, no.5, 3766-3798.
Zhang, Mei, Wu, Juanxia, Zhu, Yiming, Dumcenco, Dumitru O., Hong, Jinhua, Mao, Nannan, Deng, Shibin, Chen, Yanfeng, Yang, Yanlian, Jin, Chuanhong, Chaki, Sunil H., Huang, Ying-Sheng, Zhang, Jin, Xie, Liming. Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport. ACS nano, vol.8, no.7, 7130-7137.
Kappera, Rajesh, Voiry, Damien, Yalcin, Sibel Ebru, Branch, Brittany, Gupta, Gautam, Mohite, Aditya D., Chhowalla, Manish. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors. Nature materials, vol.13, no.12, 1128-1134.
Lee, Changgu, Yan, Hugen, Brus, Louis E., Heinz, Tony F., Hone, James, Ryu, Sunmin. Anomalous Lattice Vibrations of Single- and Few-Layer MoS2. ACS nano, vol.4, no.5, 2695-2700.
Sahin, H., Tongay, S., Horzum, S., Fan, W., Zhou, J., Li, J., Wu, J., Peeters, F. M.. Anomalous Raman spectra and thickness-dependent electronic properties of WSe2. Physical review. B, Condensed matter and materials physics, vol.87, no.16, 165409-.
Wang, Jingli, Li, Songlin, Zou, Xuming, Ho, Johnny, Liao, Lei, Xiao, Xiangheng, Jiang, Changzhong, Hu, Weida, Wang, Jianlu, Li, Jinchai. Integration of High‐k Oxide on MoS2 by Using Ozone Pretreatment for High‐Performance MoS2 Top‐Gated Transistor with Thickness‐Dependent Carrier Scattering Investigation. Small, vol.11, no.44, 5932-5938.
Chiu, Ming-Hui, Zhang, Chendong, Shiu, Hung-Wei, Chuu, Chih-Piao, Chen, Chang-Hsiao, Chang, Chih-Yuan S., Chen, Chia-Hao, Chou, Mei-Yin, Shih, Chih-Kang, Li, Lain-Jong. Determination of band alignment in the single-layer MoS 2 /WSe 2 heterojunction. Nature communications, vol.6, 7666-.
Sachid, Angada B., Tosun, Mahmut, Desai, Sujay B., Hsu, Ching‐Yi, Lien, Der‐Hsien, Madhvapathy, Surabhi R., Chen, Yu‐Ze, Hettick, Mark, Kang, Jeong Seuk, Zeng, Yuping, He, Jr‐Hau, Chang, Edward Yi, Chueh, Yu‐Lun, Javey, Ali, Hu, Chenming. Monolithic 3D CMOS Using Layered Semiconductors. Advanced materials, vol.28, no.13, 2547-2554.
Jo, Seo‐Hyeon, Kang, Dong‐Ho, Shim, Jaewoo, Jeon, Jaeho, Jeon, Min Hwan, Yoo, Gwangwe, Kim, Jinok, Lee, Jaehyeong, Yeom, Geun Young, Lee, Sungjoo, Yu, Hyun‐Yong, Choi, Changhwan, Park, Jin‐Hong. A High‐Performance WSe2/h‐BN Photodetector using a Triphenylphosphine (PPh3)‐Based n‐Doping Technique. Advanced materials, vol.28, no.24, 4824-4831.
Lim, Yi Rang, Song, Wooseok, Han, Jin Kyu, Lee, Young Bum, Kim, Sung Jun, Myung, Sung, Lee, Sun Sook, An, Ki‐Seok, Choi, Chel‐Jong, Lim, Jongsun. Wafer‐Scale, Homogeneous MoS2 Layers on Plastic Substrates for Flexible Visible‐Light Photodetectors. Advanced materials, vol.28, no.25, 5025-5030.
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., Kis, A.. Single-layer MoS2 transistors. Nature nanotechnology, vol.6, no.3, 147-150.
Yu, Zhihao, Ong, Zhun‐Yong, Pan, Yiming, Cui, Yang, Xin, Run, Shi, Yi, Wang, Baigeng, Wu, Yun, Chen, Tangsheng, Zhang, Yong‐Wei, Zhang, Gang, Wang, Xinran. Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening. Advanced materials, vol.28, no.3, 547-552.
Azcatl, Angelica, McDonnell, Stephen, K. C., Santosh, Peng, Xin, Dong, Hong, Qin, Xiaoye, Addou, Rafik, Mordi, Greg I., Lu, Ning, Kim, Jiyoung, Kim, Moon J., Cho, Kyeongjae, Wallace, Robert M.. MoS2 functionalization for ultra-thin atomic layer deposited dielectrics. Applied physics letters, vol.104, no.11, 111601-.
Zhu, Hui, Qin, Xiaoye, Cheng, Lanxia, Azcatl, Angelica, Kim, Jiyoung, Wallace, Robert M.. Remote Plasma Oxidation and Atomic Layer Etching of MoS2. ACS applied materials & interfaces, vol.8, no.29, 19119-19126.
Qian, Qingkai, Zhang, Zhaofu, Hua, Mengyuan, Tang, Gaofei, Lei, Jiacheng, Lan, Feifei, Xu, Yongkuan, Yan, Ruyue, Chen, Kevin J. Enhanced dielectric deposition on single-layer MoS2 with low damage using remote N2 plasma treatment. Nanotechnology, vol.28, no.17, 175202-.
Azcatl, Angelica, KC, Santosh, Peng, Xin, Lu, Ning, McDonnell, Stephen, Qin, Xiaoye, de Dios, Francis, Addou, Rafik, Kim, Jiyoung, Kim, Moon J, Cho, Kyeongjae, Wallace, Robert M. HfO 2 on UV-O 3 exposed transition metal dichalcogenides: interfacial reactions study. 2d materials, vol.2, no.1, 014004-.
Zan, Recep, Ramasse, Quentin M., Jalil, Rashid, Georgiou, Thanasis, Bangert, Ursel, Novoselov, Konstantin S.. Control of Radiation Damage in MoS2 by Graphene Encapsulation. ACS nano, vol.7, no.11, 10167-10174.
Ko, Taeg Yeoung, Jeong, Areum, Kim, Wontaek, Lee, Jinhwan, Kim, Youngchan, Lee, Jung Eun, Ryu, Gyeong Hee, Park, Kwanghee, Kim, Dogyeong, Lee, Zonghoon, Lee, Min Hyung, Lee, Changgu, Ryu, Sunmin. On-stack two-dimensional conversion of MoS 2 into MoO 3. 2d materials, vol.4, no.1, 014003-.
Azcatl, Angelica, Qin, Xiaoye, Prakash, Abhijith, Zhang, Chenxi, Cheng, Lanxia, Wang, Qingxiao, Lu, Ning, Kim, Moon J., Kim, Jiyoung, Cho, Kyeongjae, Addou, Rafik, Hinkle, Christopher L., Appenzeller, Joerg, Wallace, Robert M.. Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.16, no.9, 5437-5443.
Zhu, C. R., Wang, G., Liu, B. L., Marie, X., Qiao, X. F., Zhang, X., Wu, X. X., Fan, H., Tan, P. H., Amand, T., Urbaszek, B..
Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS
Mignuzzi, Sandro, Pollard, Andrew J., Bonini, Nicola, Brennan, Barry, Gilmore, Ian S., Pimenta, Marcos A., Richards, David, Roy, Debdulal. Effect of disorder on Raman scattering of single-layerMoS2. Physical review. B, Condensed matter and materials physics, vol.91, no.19, 195411-.
Loudon, R.. The Raman effect in crystals. Advances in physics, vol.13, no.52, 423-482.
Frey, Gitti L., Tenne, Reshef, Matthews, Manyalibo J., Dresselhaus, M. S., Dresselhaus, G.. Raman and resonance Raman investigation ofMoS2nanoparticles. Physical review. B, Condensed matter and materials physics, vol.60, no.4, 2883-2892.
Chakraborty, Biswanath, Bera, Achintya, Muthu, D. V. S., Bhowmick, Somnath, Waghmare, U. V., Sood, A. K.. Symmetry-dependent phonon renormalization in monolayer MoS2transistor. Physical review. B, Condensed matter and materials physics, vol.85, no.16, 161403-.
Miranda, Henrique P. C., Reichardt, Sven, Froehlicher, Guillaume, Molina-Sánchez, Alejandro, Berciaud, Stéphane, Wirtz, Ludger. Quantum Interference Effects in Resonant Raman Spectroscopy of Single- and Triple-Layer MoTe2 from First-Principles. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.17, no.4, 2381-2388.
Liang, Liangbo, Meunier, Vincent. First-principles Raman spectra of MoS2, WS2 and their heterostructures. Nanoscale, vol.6, no.10, 5394-.
Zhao, Weijie, Ghorannevis, Zohreh, Amara, Kiran Kumar, Pang, Jing Ren, Toh, Minglin, Zhang, Xin, Kloc, Christian, Tan, Ping Heng, Eda, Goki. Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2. Nanoscale, vol.5, no.20, 9677-.
Islam, Muhammad R., Kang, Narae, Bhanu, Udai, Paudel, Hari P., Erementchouk, Mikhail, Tetard, Laurene, Leuenberger, Michael N., Khondaker, Saiful I.. Tuning the electrical property via defect engineering of single layer MoS2 by oxygen plasma. Nanoscale, vol.6, no.17, 10033-10039.
해당 논문의 주제분야에서 활용도가 높은 상위 5개 콘텐츠를 보여줍니다.
더보기 버튼을 클릭하시면 더 많은 관련자료를 살펴볼 수 있습니다.
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.