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NTIS 바로가기The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment & general theory, v.122 no.9, 2018년, pp.2503 - 2512
Sukkaew, Pitsiri (Department of Physics, Chemistry and Biology , Linkö) , Danielsson, Örjan (ping University , SE−) , Ojamäe, Lars (581 83 Linkö)
Silicon carbide is a wide bandgap semiconductor with unique characteristics suitable for high temperature and high power applications. Fabrication of SiC epitaxial layers is usually performed using chemical vapor deposition (CVD). In this work, we use quantum chemical density functional theory (B3LY...
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