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NTIS 바로가기Journal of materials research, v.7 no.2, 1992년, pp.269 - 272
Xiao, Z.G. , Rozgonyi, G.A. , Canovai, C.A. , Osburn, C.M.
The agglomeration of Co silicide films formed on Si substrates processed with evaporated Co film thicknesses from 9 to 28 nm was investigated by TEM and four-point-probe resistivity measurements. It was found that the upper portion of a reacting Co or Co silicide film can agglomerate independently f...
Evolution of Thin Film and Surface Microstructure, 1991 Xiao
Ruterana, P., Houdy, P., Boher, P.. A transmission electron microscopy study of low-temperature reaction at the Co-Si interface. Journal of applied physics, vol.68, no.3, 1033-1037.
Veuillen, J. Y., Derrien, J., Badoz, P. A., Rosencher, E., d’Anterroches, C.. Co/Si(111) interface: Formation of an initial CoSi2 phase at room temperature. Applied physics letters, vol.51, no.18, 1448-1450.
Berry, R. Stephen, Bernholc, J., Salamon, Peter. Disappearance of grain boundaries in sintering. Applied physics letters, vol.58, no.6, 595-597.
Osburn, C. M.. Formation of silicided, ultra-shallow junctions using low thermal budget processing. Journal of electronic materials, vol.19, no.1, 67-88.
van Gurp, G. J., Langereis, C.. Cobalt silicide layers on Si. I. Structure and growth. Journal of applied physics, vol.46, no.10, 4301-4307.
VLSI Electronics Microstructure Science, 6 330 1983 Nicolet
Reduced Thermal Processing for ULSI, 207 53 1988 van
Lien, C. -D., Nicolet, M. -A., Lau, S. S.. Kinetics of CoSi2 from evaporated silicon. Applied physics. A, Solids and surfaces, vol.34, no.4, 249-251.
van Gurp, G. J., van der Weg, W. F., Sigurd, D.. Interactions in the Co/Si thin-film system. II. Diffusion-marker experiments. Journal of applied physics, vol.49, no.7, 4011-4020.
d'Heurle, F.M.. Formation of thin films of CoSi2: Nucleation and diffusion mechanisms. Thin solid films, vol.128, no.3, 283-297.
11. Xiao Z. G. , Rozgonyi G. A. , and Honeycutt J. W. , manuscript in preparation.
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