[논문]Large-Scale Polarization-Insensitive Silicon Photonic MEMS Switches

Han, Sangyoon; Seok, Tae Joon; Yu, Kyoungsik; Quack, Niels; Muller, Richard S.; Wu, Ming C.

doi:10.1109/jlt.2018.2791502

[해외논문] Large-Scale Polarization-Insensitive Silicon Photonic MEMS Switches 원문보기

Journal of lightwave technology : a joint IEEE/OSA publication, v.36 no.10, 2018년, pp.1824 - 1830

Han, Sangyoon (Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA) , Seok, Tae Joon (Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA) , Yu, Kyoungsik (University of California, Berkeley, Berkeley, CA, USA) , Quack, Niels (University of California, Berkeley, Berkeley, CA, USA) , Muller, Richard S. (Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA) , Wu, Ming C. (Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA)

Abstract ▼ AI-Helper

We report on 50 × 50 silicon photonic micro-electromechanical-system (MEMS) switches with reduced polarization dependence. The switches make use of two-level waveguide crossbars and MEMS-actuated adiabatic couplers. Simulations indicate that by eliminating all polarization-dependent elements (e.g., waveguide crossings), low polarization-dependent losses (<1 dB) can be realized. An experimental prototype switch was fabricated by bonding two silicon-on-insulator wafers. A polarization-dependent loss of 8.5 dB and a polarization-dependent delay of 44 ps were measured. The extinction ratios are greater than 40 dB for both polarizations. With improved fabrication, total on-chip loss <2 dB can potentially be achieved for both polarizations.

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