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Microelectronics reliability, v.86, 2018년, pp.1 - 9
Wlanis, Thomas (Materials Center Leoben Forschung GmbH, 8700 Leoben, Austria) , Hammer, René (Materials Center Leoben Forschung GmbH, 8700 Leoben, Austria) , Ecker, Werner (Materials Center Leoben Forschung GmbH, 8700 Leoben, Austria) , Lhostis, Sandrine (STMicroelectronics SAS, 38926 Crolles, France) , Sart, Clément (STMicroelectronics SAS, 38926 Crolles, France) , Gallois-Garreignot, Sébastien (STMicroelectronics SAS, 38926 Crolles, France) , Rebhan, Bernhard (EV Group, 4782 St. Florian am Inn, Austria) , Maier, Günther A. (Materials Center Leoben Forschung GmbH, 8700 Leoben, Austria)
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Abstract Cu-SiO2 direct hybrid bonding is considered as one of the key enabling technologies for 3D integration. Previous studies showed that the main process parameters influencing the bonding quality are temperature and annealing time, as well as the mechanical stress at the Cu-Cu interface. The ...
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