[논문]Residual stress control of Cu film deposited using a pulsed direct current magnetron sputtering

Kim, Tae Hyung; Lee, Soo Jung; Kim, Do Han; Kim, Dong Woo; Bae, Jeong Woon; Kim, Kyong Nam; Kim, Yong Mo; Yeom, Geun Young

doi:10.1016/j.tsf.2018.05.011

Residual stress control of Cu film deposited using a pulsed direct current magnetron sputtering

Thin solid films, v.660, 2018년, pp.601 - 605

Kim, Tae Hyung (Department of Materials Science and Engineering, Sungkyunkwan University) , Lee, Soo Jung (Department of Materials Science and Engineering, Sungkyunkwan University) , Kim, Do Han (Department of Materials Science and Engineering, Sungkyunkwan University) , Kim, Dong Woo (Department of Materials Science and Engineering, Sungkyunkwan University) , Bae, Jeong Woon (Department of Materials Science and Engineering, Sungkyunkwan University) , Kim, Kyong Nam (Department of Advanced Materials, Daejeon University) , Kim, Yong Mo (STC Division, Korea Instrument Co., Ltd.) , Yeom, Geun Young (Department of Materials Science and Engineering, Sungkyunkwan University)

Abstract ▼ AI-Helper

Abstract Residual stress of 10 μm thick copper (Cu) film deposited using direct current (DC) magnetron sputtering system was analyzed for various pulsed DC power conditions. It is found that the increase of pulse frequency at a fixed duty ratio of 80% from continuous wave (CW) to 100 kHz while maintaining the time average power significantly decreased the residual stress of Cu film from 21.75 MPa to 1.8 MPa. The decrease of pulse duty ratio further decreased the residual stress by showing 0.7 MPa at 60% of duty ratio and 50 kHz pulse frequency. Therefore, compared to CW power, Cu film with ~1/30 lower residual stress could be deposited by using DC pulse power. The decrease of residual stress by pulsing and by decreasing the pulse duty ratio while keeping the same time average power was related to the denser film density and smaller grain size of deposited Cu film caused by increased instant sputter power during the pulsing. Highlights Residual stress of Cu film using sputter was analyzed for various pulsed power conditions. The pulse frequency and pulse duty ratio affect the residual stress of the Cu film. The higher instantaneous flux and ion energy lead to less tensile/more compressive stress. The residual stress is related to the grain size and film density of the Cu film. It is caused by the increased nucleation and increased ion bombardment on the substrate.

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Residual stress control of Cu film deposited using a pulsed direct current magnetron sputtering

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Residual stress control of Cu film deposited using a pulsed direct current magnetron sputtering

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