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NTIS 바로가기Journal of materials chemistry. C, Materials for optical and electronic devices, v.6 no.15, 2018년, pp.3917 - 3926
Karwal, S. (Department of Applied Physics) , Verheijen, M. A. (Department of Applied Physics) , Williams, B. L. (Department of Applied Physics) , Faraz, T. (Department of Applied Physics) , Kessels, W. M. M. (Department of Applied Physics) , Creatore, M. (Department of Applied Physics)
Plasma-assisted atomic layer deposition (ALD) of HfNx thin films using tris(dimethylamino)cyclopentadienylhafnium [CpHf(NMe2)3] as the Hf precursor and H2 plasma as the reducing co-reactant is reported. We previously concluded that the HfNx films prepared for a grounded substrate (0 V substrate pote...
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