최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기IEEE transactions on magnetics, v.54 no.2 pt.2, 2018년, pp.1 - 3
Cho, Dooho (Department of Electronic Engineering, Hanyang University, Seoul, South Korea) , Kim, Kyungmin (Department of Electronic Engineering, Hanyang University, Seoul, South Korea) , Yoo, Changsik (Department of Electronic Engineering, Hanyang University, Seoul, South Korea)
A magnetic tunneling junction (MTJ)-based ternary content-addressable memory (TCAM) cell is proposed which consists of 12 transistors and two MTJs. The proposed TCAM cell does not have static power consumption during search operation and therefore ensures highly energy efficient operation. For searc...
IEEE Symp VLSI Circuits Dig Tech Papers Fully parallel 6T-2MTJ nonvolatile TCAM with single-transistor-based self match-line discharge control matsunaga 2011 289
Gupta, Mohit Kumar, Hasan, Mohammad. Design of High-Speed Energy-Efficient Masking Error Immune PentaMTJ-Based TCAM. IEEE transactions on magnetics, vol.51, no.2, 1-9.
Gupta, Mohit Kumar, Hasan, Mohd. Robust High Speed Ternary Magnetic Content Addressable Memory. IEEE transactions on electron devices, vol.62, no.4, 1163-1169.
IEEE Symp VLSI Circuits Dig Tech Papers A 3.14 $\mu $ m2 4 T-2 MTJ-cell fully parallel TCAM based on nonvolatile logic-in-memory architecture matsunaga 2012 44
Song, Byungkyu, Na, Taehui, Kim, Jung Pill, Kang, Seung H., Jung, Seong-Ook. A 10T-4MTJ Nonvolatile Ternary CAM Cell for Reliable Search Operation and a Compact Area. IEEE transactions on circuits and systems. a publication of the IEEE Circuits and Systems Society. II, Express briefs, vol.64, no.6, 700-704.
Yue Zhang, Weisheng Zhao, Klein, J-O, Ravelsona, D., Chappert, C.. Ultra-High Density Content Addressable Memory Based on Current Induced Domain Wall Motion in Magnetic Track. IEEE transactions on magnetics, vol.48, no.11, 3219-3222.
Low-power high-performance ternary content addressable memory circuits mohan 2006
Pagiamtzis, K., Sheikholeslami, A.. Content-addressable memory (CAM) circuits and architectures: a tutorial and survey. IEEE journal of solid-state circuits, vol.41, no.3, 712-727.
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.