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MRS Internet journal of nitride semiconductor research, v.4 suppl.1, 1999년, pp.769 - 774
Flierl, C. , White, I.H. , Kuball, M. , Heard, P.J. , Allen, G.C. , Marinelli, C. , Rorison, J.M. , Penty, R.V. , Chen, Y. , Wang, S.Y.
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We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching - a well-established tec...
Ito, Tsuyoshi, Ishikawa, Hiroyasu, Egawa, Takashi, Jimbo, Takashi, Umeno, Masayoshi. Fabrication of Flat End Mirror Etched by Focused Ion Beam for GaN-Based Blue-Green Laser Diode. Japanese journal of applied physics. Part 1, Regular papers, short notes and review papers, vol.36, no.b12, 7710-7711.
Vassilevski, K.V., Rastegaeva, M.G., Babanin, A.I., Nikitina, I.P., Dmitriev, V.A.. Fabrication of GaN mesa structures. MRS Internet journal of nitride semiconductor research, vol.1, e38-.
Mack, M.P., Via, G.D., Abare, A.C., Hansen, M., Kozodoy, P.K., Keller, S., Speck, J.S., Mishra, U.K., Coldren, L.A., DenBaars, S.P.. Improvement of GaN-based laser diode facets by FIB polishing. Electronics letters, vol.34, no.13, 1315-1316.
10.1007/978-3-662-03462-0 [5] Nakamura S. and Fasol G. , “The blue laser diode: GaN based light emitters and lasers” (Springer, Berlin, New York, 1997).
Dowd, P., Heard, P.J., Nicholson, J.A., Raddatz, L., White, I.H., Penty, R.V., Allen, G.C., Corzine, S.W., Tan, M.R.T.. Complete polarisation control of GaAs gain-guided top-surface emitting vertical cavity lasers. Electronics letters, vol.33, no.15, 1315-1317.
Song, Y.-K., Kuball, M., Nurmikko, A. V., Bulman, G. E., Doverspike, K., Sheppard, S. T., Weeks, T. W., Leonard, M., Kong, H. S., Dieringer, H., Edmond, J.. Gain characteristics of InGaN/GaN quantum well diode lasers. Applied physics letters, vol.72, no.12, 1418-1420.
Wu, Y.-F., Keller, B.P., Keller, S., Nguyen, N.X., Le, M., Nguyen, C., Jenkins, T.J., Kehias, L.T., Denbaars, S.P., Mishra, U.K.. Short channel AlGaN/GaN MODFET's with 50-GHz fT and 1.7-W/mm output-power at 10 GHz. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.18, no.9, 438-440.
Nakamura, Shuji, Senoh, Masayuki, Nagahama, Shin-ichi, Iwasa, Naruhito, Yamada, Takao, Matsushita, Toshio, Kiyoku, Hiroyuki, Sugimoto, Yasunobu, Kozaki, Tokuya, Umemoto, Hitoshi, Sano, Masahiko, Chocho, Kazuyuki. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate. Applied physics letters, vol.72, no.2, 211-213.
Yoshida, Seikoh, Suzuki, Joe. Reliability of GaN Metal Semiconductor Field-Effect Transistor at High Temperature. Japanese journal of applied physics. Part 2, Letters, vol.37, no.5, L482-.
[10] Sargent L.J. , Kuball M. , Rorison J.M. , Penty R.V. , White I.H. , Heard P. J. , Tan M. R. T. , and Wang S. Y. , submitted to Appl. Phys. Lett.
Katoh, H., Takeuchi, T., Anbe, C., Mizumoto, R., Yamaguchi, S., Wetzel, C., Amano, H., Akasaki, I., Kaneko, Y., Yamada, N.. GaN Based Laser Diode with Focused Ion Beam Etched Mirrors. Japanese journal of applied physics. Part 2, Letters, vol.37, no.4, L 444-L 446.
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