다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기
Materials, v.10 no.12, 2017년, pp.1415 -
Chen, Kai-Huang (Department of Electrical Engineering and Computer Science, Tung Fang Design University, Kaohsiung 82941, Taiwan) , Kao, Ming-Cheng (patrick@mail.tf.edu.tw) , Huang, Shou-Jen (Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung 41280, Taiwan) , Li, Jian-Zhi (kmc@mail.hust.edu.tw)
AI-Helper
Bipolar resistive switching properties and endurance switching behavior of the neodymium oxide (Nd2O3) thin films resistive random access memory (RRAM) devices for a high resistive status/low resistive status (HRS/LRS) using a low temperature supercritical carbon dioxide fluid (SCF) improvement post...
1. Chen K.H. Chang K.C. Chang T.C. Tsai T.M. Liao K.H. Syu Y.E. Sze S.M. Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOx thin film RRAM devices Appl. Phys. A 2016 122 228 10.1007/s00339-016-9768-5
2. Chang K.C. Tsai T.M. Chang T.C. Syu Y.E. Liao K.H. Chuang S.L. Li C.H. Gan D.S. Sze S.M. The Effect of Silicon Oxide Based RRAM with Tin Doping Electrochem. Solid-State Lett. 2012 15 H65 H68 10.1149/2.013203esl
3. Tsai T.M. Chang K.C. Chang T.C. Syu Y.E. Liao K.H. Tseng B.H. Sze S.M. Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO 2 fluid treatment Appl. Phys. Lett. 2012 101 112906 10.1063/1.4750235
4. Chen K.H. Chang K.C. Chang T.C. Tsai T.M. Liao K.H. Syu Y.E. Sze S.M. Hopping conduction properties of the Sn:SiO X thin-film resistance random access memory devices induced by rapid temperature annealing procedure Appl. Phys. A 2015 119 1609 1613 10.1007/s00339-015-9144-x
5. Chen K.H. Huang J.W. Cheng C.M. Lin J.Y. Wu T.S. Nonvolatile transparent manganese oxide thin film resistance random access memory devices J. Jpn. Appl. Phys. 2014 53 10.7567/JJAP.53.08NL03
6. Acharyya D. Hazra A. Bhattacharyya P. A journey towards reliability improvement of TiO 2 based Resistive Random Access Memory: A review Microelectron. Reliab. 2014 54 541 560 10.1016/j.microrel.2013.11.013
7. Ghenzi N. Rubi D. Manganod E. Gimenez G. Lell J. Zelcer A. Stoliar P. Levy P. Building memristive and radiation hardness TiO 2 -based junctions Thin Solid Films 2014 550 683 688 10.1016/j.tsf.2013.11.013
8. Lai C.H. Chen C.H. Tseng T.Y. Resistive switching behavior of sol–gel deposited TiO 2 thin films under different heating ambience Surf. Coat. Technol. 2013 231 399 402 10.1016/j.surfcoat.2012.05.045
9. Panda D. Tseng T.Y. Growth, dielectric properties, and memory device applications of ZrO 2 thin films Thin Solid Films 2013 531 1 20 10.1016/j.tsf.2013.01.004
10. Zhao H. Tu H. Wei F. Zhang X. Xiong Y. Du J. The enhancement of unipolar resistive switching behavior via an amorphous TiO x layer formation in Dy 2 O 3 -based forming-free RRAM Solid State Electron. 2013 89 12 16 10.1016/j.sse.2013.06.011
11. Cao X. Li X. Gao X. Yu W. Liu X. Zhang Y. Chen L. Cheng X. Forming-free colossal resistive switching effect in rare-earth-oxide Gd 2 O 3 films for memristor applications J. Appl. Phys. 2009 106 073723 10.1063/1.3236573
12. Lin K.C. Tzeng W.H. Chang K.M. Chan Y.C. Kuo C.C. Bipolar resistive switching effect in Gd2O3 films for transparent memory application Microelectron. Eng. 2011 88 1586 1589
13. Chang K.C. Tsai T.M. Chang T.C. Syu Y.E. Wang C.C. Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO 2 fluid treatment Appl. Phys. Lett. 2011 99 263501 10.1063/1.3671991
14. Chen K.H. Chang T.C. Chang G.C. Hsu Y.E. Chen Y.C. Xu H.Q. Low temperature improvement method on characteristics of Ba(Zr 0.1 Ti 0.9 )O 3 thin films deposited on indium tin oxide/glass substrates Appl. Phys. A. 2010 99 291 295 10.1007/s00339-009-5523-5
15. Chen K.H. Chen Y.C. Yang C.F. Chen Z.S. Chang T.C. Effects of Laser Annealing on the Electrical Characteristics of Dynamic Random Access Memory Using (Ba 0.7 Sr 0.3 )(Ti 0.9 Zr 0.1 )O 3 Thin Films Jpn. J. Appl. Phys. 2007 46 4197 4199 10.1143/JJAP.46.4197
16. Tsai T.M. Chang K.C. Chang T.C. Syu Y.E. Chuang S.L. Chang G.W. Liu G.R. Chen M.C. Huang H.C. Liu S.K. Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated into Silicon Oxide Dielectrics for IC Applications IEEE Electron. Device Lett. 2012 33 1696 1698 10.1109/LED.2012.2217933
17. Tsai T.M. Chang K.C. Chang T.C. Chang G.W. Syu Y.E. Su Y.E. Su Y.T. Liu G.R. Liao K.H. Chen M.C. Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical CO 2 Fluid Treatment IEEE Electron. Device Lett. 2012 33 1693 1695 10.1109/LED.2012.2217932
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
오픈액세스 학술지에 출판된 논문
Copyright KISTI. All Rights Reserved.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.