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NTIS 바로가기Results in physics, v.12, 2019년, pp.1091 - 1096
Gül, Fatih
Abstract Resistive random access memories (RRAMs) are favorable contenders in the race towards future technologies. Moreover, the desirable properties of memristor-based RRAM devices make them very good competitors in this field. The sneak paths problem poses one of the main difficulties in the con...
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