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Diffusion and defect data. SSP. [Pt. B], Solid state phenomena, v.282, 2018년, pp.238 - 243
Okorn-Schmidt, Harald (LLRC OG) , Engesser, Philipp (LLRC OG) , Linder, Manuel (4Tex GmbH) , Hofer-Moser, Jörg (4Tex GmbH)
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In this paper we demonstrate an effective process control mechanism to significantly improve on the process performance of a BEOL post-etch cleaning process with an integrated partial or complete removal of the TiN HM (hard mask) layer by so called formulated chemistries on a single wafer processing...
E. Kesters, Q.T. Le, D. Yu, M. Shen, S. Braun, A. Klippand, F. Holsteyns, Post Etch Residue Removal and Material Compatibility in BEOL using Formulated Chemistries, Solid State Phenomena 219 (2015) 201-204. 10.4028/www.scientific.net/ssp.219.201
A. Iwasaki, K. Courouble, S. Lippy, F. Buisine, H. Ishikawa, E. Cooper, E. Kennedy, S. Zoll and L. Broussous, Industrial Challenges of TiN Hard Mask Wet removal process for 14nm technology node, Solid State Phenomena 219 (2015) 213-216. 10.4028/www.scientific.net/ssp.219.213
H.F. Schmidt, M. Meuris, P.W. Mertens, A.L.P. Rotondaro, M.M. Heyns, T.Q. Hurd and Z. Hatcher, H2O2 Decomposition and Its Impact on Silicon Surface Roughening and Gate Oxide Integrity, Jap. Journal of Applied Physics, 34(2) (1995) 727-731. 10.1143/jjap.34.727
J. Ramo, Hydrogen peroxide-metals-chelating agents; Interactions and analytical techniques, Dissertation, Faculty of Technology, University of Oulu (2003).
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H. Cui, TiN metal hardmask etch residue removal with mask pullback and complete mask removal for Cu dual damascene device, Advanced Semiconductor Manufacturing Conference (ASMC), 23rd Annual SEMI, 2012, pp.305-307. 10.1109/asmc.2012.6212916
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