참고문헌 (39)

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2. Dimroth, Frank, Tibbits, Thomas N. D., Niemeyer, Markus, Predan, Felix, Beutel, Paul, Karcher, Christian, Oliva, Eduard, Siefer, Gerald, Lackner, David, Fus-Kailuweit, Peter, Bett, Andreas W., Krause, Rainer, Drazek, Charlotte, Guiot, Eric, Wasselin, Jocelyne, Tauzin, Aurelie, Signamarcheix, Thomas. Four-Junction Wafer-Bonded Concentrator Solar Cells. IEEE journal of photovoltaics, vol.6, no.1, 343-349.

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5. Britnell, L., Gorbachev, R. V., Jalil, R., Belle, B. D., Schedin, F., Mishchenko, A., Georgiou, T., Katsnelson, M. I., Eaves, L., Morozov, S. V., Peres, N. M. R., Leist, J., Geim, A. K., Novoselov, K. S., Ponomarenko, L. A.. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures. Science, vol.335, no.6071, 947-950.

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6. Bohr, Mark T., Young, Ian A.. CMOS Scaling Trends and Beyond. IEEE micro, vol.37, no.6, 20-29.

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7. Anderson, Erik C., Bougher, Thomas L., Cola, Baratunde A.. High Performance Multiwall Carbon Nanotube-Insulator-Metal Tunnel Diode Arrays for Optical Rectification. Advanced electronic materials, vol.4, no.3, 1700446-.

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8. Govoreanu, Bogdan, Adelmann, Christoph, Redolfi, Augusto, Leqi Zhang, Clima, Sergiu, Jurczak, Malgorzata. High-Performance Metal-Insulator-Metal Tunnel Diode Selectors. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.35, no.1, 63-65.

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9. Electron emission in intense electric fields. Proceedings of the Royal Society of London. Series A, Containing papers of a mathematical and physical character, vol.119, no.781, 173-181.

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10. Leskelä, Markku, Ritala, Mikko. Atomic layer deposition (ALD): from precursors to thin film structures. Thin solid films, vol.409, no.1, 138-146.

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11. Alimardani, Nasir, William Cowell III, E., Wager, John F., Conley Jr., John F., Evans, David R., Chin, Matthew, Kilpatrick, Stephen J., Dubey, Madan. Impact of electrode roughness on metal-insulator-metal tunnel diodes with atomic layer deposited Al2O3 tunnel barriers. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, vol.30, no.1, 01A113-.

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12. Meyers, Stephen T., Anderson, Jeremy T., Hung, Celia M., Thompson, John, Wager, John F., Keszler, Douglas A.. Aqueous Inorganic Inks for Low-Temperature Fabrication of ZnO TFTs. Journal of the American Chemical Society, vol.130, no.51, 17603-17609.

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13. Jeong, Sunho, Ha, Young-Geun, Moon, Jooho, Facchetti, Antonio, Marks, Tobin J.. Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors. Advanced materials, vol.22, no.12, 1346-1350.

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14. Becerril, Héctor A., Mao, Jie, Liu, Zunfeng, Stoltenberg, Randall M., Bao, Zhenan, Chen, Yongsheng. Evaluation of Solution-Processed Reduced Graphene Oxide Films as Transparent Conductors. ACS nano, vol.2, no.3, 463-470.

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15. Banger, K. K., Yamashita, Y., Mori, K., Peterson, R. L., Leedham, T., Rickard, J., Sirringhaus, H.. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ？?sol？?gel on chip？? process. Nature materials, vol.10, no.1, 45-50.

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16. Nadarajah, Athavan, Carnes, Matthew E., Kast, Matthew G., Johnson, Darren W., Boettcher, Shannon W.. Aqueous Solution Processing of F-Doped SnO₂ Transparent Conducting Oxide Films Using a Reactive Tin(II) Hydroxide Nitrate Nanoscale Cluster. Chemistry of materials : a publication of the American Chemical Society, vol.25, no.20, 4080-4087.

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17. Nadarajah, Athavan, Wu, Mahkah Z. B., Archila, Kevin, Kast, Matthew G., Smith, Adam M., Chiang, Tsung H., Keszler, Douglas A., Wager, John F., Boettcher, Shannon W.. Amorphous In–Ga–Zn Oxide Semiconducting Thin Films with High Mobility from Electrochemically Generated Aqueous Nanocluster Inks. Chemistry of materials : a publication of the American Chemical Society, vol.27, no.16, 5587-5596.

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18. Perkins, Cory K., Mansergh, Ryan H., Ramos, Juan C., Nanayakkara, Charith E., Park, Deok-Hie, Goberna-Ferrón, Sara, Fullmer, Lauren B., Arens, Joshua T., Gutierrez-Higgins, Maceo T., Jones, Yolanda R., Lopez, Jonathon I., Rowe, Thomas M., Whitehurst, Danielle M., Nyman, May, Chabal, Yves J., Keszler, Douglas A.. Low-index, smooth Al_2O_3 films by aqueous solution process. Optical materials express, vol.7, no.1, 273-.

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19. Murari, Nishit M., Mansergh, Ryan H., Huang, Yu, Kast, Matthew G., Keszler, Douglas A., Conley Jr., John F.. Aerosol jet fog (ajFOG) deposition of aluminum oxide phosphate thin films from an aqueous fog. Journal of materials research, vol.31, no.21, 3303-3312.

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20. Oleksak, Richard P., Ruther, Rose E., Luo, Feixiang, Fairley, Kurtis C., Decker, Shawn R., Stickle, William F., Johnson, Darren W., Garfunkel, Eric L., Herman, Gregory S., Keszler, Douglas A.. Chemical and Structural Investigation of High-Resolution Patterning with HafSOx. ACS applied materials & interfaces, vol.6, no.4, 2917-2921.

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21. Frontiers of Nanoscience Materials and Processes for Next Generation Lithography Olynick D. 349 11 2016 10.1016/B978-0-08-100354-1.00010-7 

    

22. Smith, Sean W., Wang, Wei, Keszler, Douglas A., Conley Jr., John F.. Solution based prompt inorganic condensation and atomic layer deposition of Al2O3 films: A side-by-side comparison. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, vol.32, no.4, 041501-.

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23. Perkins, Cory K., Eitrheim, Eric S., Fulton, Brantly L., Fullmer, Lauren B., Colla, Christopher A., Park, Deok‐Hie, Oliveri, Anna F., Hutchison, James E., Nyman, May, Casey, William H., Forbes, Tori Z., Johnson, Darren W., Keszler, Douglas A.. Synthesis of an Aluminum Hydroxide Octamer through a Simple Dissolution Method. Angewandte Chemie. international edition, vol.56, no.34, 10161-10164.

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24. Mensinger, Zachary L., Gatlin, Jason T., Meyers, Stephen T., Zakharov, Lev N., Keszler, Douglas A., Johnson, Darren W.. Synthesis of Heterometallic Group 13 Nanoclusters and Inks for Oxide Thin-Film Transistors. Angewandte Chemie. international edition, vol.47, no.49, 9484-9486.

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25. Wang, Wei, Wentz, Katherine M., Hayes, Sophia E., Johnson, Darren W., Keszler, Douglas A.. Synthesis of the Hydroxide Cluster [Al₁₃(μ₃-OH)₆(μ-OH)₁₈(H₂O)₂₄]¹⁵⁺ from an Aqueous Solution. Inorganic chemistry, vol.50, no.11, 4683-4685.

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26. Wang, Wei, Liu, Weimin, Chang, I-Ya, Wills, Lindsay A., Zakharov, Lev N., Boettcher, Shannon W., Cheong, Paul Ha-Yeon, Fang, Chong, Keszler, Douglas A.. Electrolytic synthesis of aqueous aluminum nanoclusters and in situ characterization by femtosecond Raman spectroscopy and computations. Proceedings of the National Academy of Sciences of the United States of America, vol.110, no.46, 18397-18401.

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27. Gatlin, Jason T., Mensinger, Zachary L., Zakharov, Lev N., MacInnes, David., Johnson, Darren W.. Facile Synthesis of the Tridecameric Al₁₃ Nanocluster Al₁₃(μ₃-OH)₆(μ₂-OH)₁₈(H₂O)₂₄(NO₃)₁₅. Inorganic chemistry, vol.47, no.4, 1267-1269.

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28. Fulton, Brantly L., Perkins, Cory K., Mansergh, Ryan H., Jenkins, Melanie A., Gouliouk, Vasily, Jackson, Milton N., Ramos, Juan C., Rogovoy, Nichole M., Gutierrez-Higgins, Maceo T., Boettcher, Shannon W., Conley, John F., Keszler, Douglas A., Hutchison, James E., Johnson, Darren W.. Minerals to Materials: Bulk Synthesis of Aqueous Aluminum Clusters and Their Use as Precursors for Metal Oxide Thin Films. Chemistry of materials : a publication of the American Chemical Society, vol.29, no.18, 7760-7765.

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29. Perkins, C.K., Mansergh, R.H., Park, D.H., Nanayakkara, C.E., Ramos, J.C., Decker, S.R., Huang, Y., Chabal, Y.J., Keszler, D.A.. Aqueous process to limit hydration of thin-film inorganic oxides. Solid state sciences, vol.61, 106-110.

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30. Chiang, Tsung-Han, Wager, John F.. Electronic Conduction Mechanisms in Insulators. IEEE transactions on electron devices, vol.65, no.1, 223-230.

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31. Chiesa, Mario, Paganini, Maria Cristina, Giamello, Elio, Di Valentin, Cristiana, Pacchioni, Gianfranco. First Evidence of a Single-Ion Electron Trap at the Surface of an Ionic Oxide. Angewandte Chemie. international edition, vol.42, no.15, 1759-1761.

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32. Pio, F., Ravazzi, L., Riva, C.. Series resistance effects in thin oxide capacitor evaluation. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.13, no.10, 544-546.

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33. Chiu, Fu-Chien. A Review on Conduction Mechanisms in Dielectric Films. Advances in materials science and engineering, vol.2014, 1-18.

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34. Noh, E. S., Ulloa, S. E., Lee, H. M.. A theoretical study of an amorphous aluminium oxide layer used as a tunnel barrier in a magnetic tunnel junction. Physica status solidi. PSS. B, Basic solid state physics, vol.244, no.12, 4427-4430.

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35. Cowell III, E. William, Muir, Sean W., Keszler, Douglas A., Wager, John F.. Barrier height estimation of asymmetric metal-insulator-metal tunneling diodes. Journal of applied physics, vol.114, no.21, 213703-.

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36. Medvedeva, J. E.. Averaging of the electron effective mass in multicomponent transparent conducting oxides. Europhysics letters : EPL, vol.78, no.5, 57004-.

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37. Kim, Jihoon, Song, Jaewon, Kwon, Ohsung, Kim, Sungkeun, Hwang, Cheol Seong, Park, Sang-Hee’Ko, Yun, Sun Jin, Jeong, Jaehack, Hyun, Kwang Soo. Improvement in electrical insulating properties of 10-nm-thick Al2O3 film grown on Al/TiN/Si substrate by remote plasma annealing at low temperatures. Applied physics letters, vol.80, no.15, 2734-2736.

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38. Akitt, J. W., Farthing, Alan. Aluminium-27 nuclear magnetic resonance studies of the hydrolysis of aluminium(III). Part 5. Slow hydrolysis using aluminium metal. Journal of the Chemical Society. Dalton transactions, vol.1981, no.7, 1624-1628.

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39. Akitt, J.W, Farthing, A. New ²⁷Al NM studies of the hydrolysis of the aluminum(III) cation. Journal of magnetic resonance, vol.32, no.3, 345-352.

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