$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Design of ITO/SiO2/TiO2 distributed Bragg reflectors as a p-type electrode in GaN-based flip-chip light emitting diodes

Applied surface science, v.477, 2019년, pp.220 - 225  

Lee, Gil Jun (Department of Printed Electronics Engineering, Sunchon National University) ,  Hong, In Yeol (Department of Printed Electronics Engineering, Sunchon National University) ,  Kim, Tae Kyoung (Department of Printed Electronics Engineering, Sunchon National University) ,  Park, Hyun Jung (Department of Printed Electronics Engineering, Sunchon National University) ,  Oh, Seung Kyu (Department of Printed Electronics Engineering, Sunchon National University) ,  Cha, Yu-Jung (Department of Printed Electronics Engineering, Sunchon National University) ,  Park, Min Joo (School of Materials Science and Engineering, Ulsan National Institute of Science and Engineering (UNIST)) ,  Choi, Kyoung Jin (School of Materials Science and Engineering, Ulsan National Institute of Science and Engineering (UNIST)) ,  Kwak, Joon Seop (Department of Printed Electronics Engineering, Sunchon National University)

Abstract ▼ AI-Helper 아이콘AI-Helper

Abstract Two different SiO2/TiO2 distributed Bragg reflectors (DBR) with ITO ohmic contacts were investigated as p-type reflective electrodes in InGaN/GaN flip-chip light-emitting diodes (FC-LEDs). The DBR structures were designed to have reflectance over 95% at wavelengths of 400–520nm (DBR ...

주제어

#Flip-chip LED   #Distributed Bragg reflectors   #GaN   #p-type electrodes  

참고문헌 (30)

  1. Phys. Status Solidi, A Bhardwaj 214 8 1600826 2017 10.1002/pssa.201600826 Progress in high-luminance LED technology for solid-state lighting 

    상세보기 crossref

  2. J. Disp. Technol. Peng 12 742 2016 10.1109/JDT.2016.2518491 Full-color pixelated-addressable light emitting diode on transparent substrate (LEDoTS) micro-displays by CoB 

    상세보기 crossref

  3. Appl. Therm. Eng. Wang 123 19 2017 10.1016/j.applthermaleng.2017.05.039 Heat dissipation of high-power light emitting diode chip on board by a novel flat plate heat pipe 

    상세보기 crossref

  4. Opt. Mater. Ma 69 105 2017 10.1016/j.optmat.2017.04.019 High reliable and chromaticity-tunable flip-chip w-LEDs with Ce:YAG glass-ceramics phosphor for long-lifetime automotive headlights applications 

    상세보기 crossref

  5. Appl. Opt. Lee 56 5106 2017 10.1364/AO.56.005106 Improvement of disturbing color effects depending on the axial color of an automotive headlamp lens 

    상세보기 crossref

  6. Proceedings of IEEE International Forum on Solid State Lighting Li 259 2013 A study of flip-chip direct attachment LED COBs with metal core print circuit boards 

  7. IEEE Photonics Technol. Lett. Han 18 1406 2006 High-power AlGaInN flip-chip light-emitting diodes 

  8. Appl. Phys. Lett. Wierer 78 3379 2001 10.1063/1.1374499 Improvement of light extraction efficiency of flip-chip light-emitting diode by texturing the bottom side surface of sapphire substrate 

    상세보기 crossref

  9. Schubert 2005 Light Emitting Diodes 

  10. Appl. Surf. Sci. Chang 255 6155 2009 10.1016/j.apsusc.2009.01.087 High reflective p-GaN/Ni/Ag/Ti/Au Ohmic contacts for flip-chip light-emitting diode (FCLED) applications 

    상세보기 crossref

  11. Appl. Phys. Lett. Kim 77 1903 2000 10.1063/1.1311819 Modeling of a GaN-based light-emitting diode for uniform current spreading 

    상세보기 crossref

  12. Appl. Surf. Sci. Hu 357 1703 2015 10.1016/j.apsusc.2015.09.186 Effects of pre-annealed ITO film on the electrical characteristics of high-reflectance Ni/Ag/Ni/Au contacts to p-type GaN 

    상세보기 crossref

  13. Proc. SPIE 9571, 14th International Conference on Solid State Lighting and LED-based Illumination Systems Choi 2015 High performance near-ultraviolet flip-chip light-emitting diodes with distributed Bragg reflector 

  14. IEEE Photonics Technol. Lett. Lin 18 2050 2006 10.1109/LPT.2006.883330 Enhancement of InGaN?GaN indium-tin-oxide flip-chip light-emitting diodes with TiO2-SiO2 multilayer stack omnidirectional reflector 

    상세보기 crossref

  15. Appl. Phys. Lett. Kim 84 4508 2004 10.1063/1.1757634 GaInN light-emitting diodes with RuO2/SiO2/Ag omni-directional reflector 

    상세보기 crossref

  16. Appl. Phy. Exp. Chen 6 022101 2013 10.7567/APEX.6.022101 Enhanced performance of GaN-based light-emitting diodes by using Al mirror and atomic layer deposition-TiO2/Al2O3 distributed Bragg reflector backside reflector with patterned sapphire substrate 

    상세보기 crossref

  17. Superlattices Microstruct. Park 64 7 2013 10.1016/j.spmi.2013.09.019 Improving the output power of near-ultraviolet InGaN/GaN-based light emitting diodes by enhancing the thermal and electrical properties of Ag-based reflector 

    상세보기 crossref

  18. Appl. Phys. Lett. Song 86 062104 2005 10.1063/1.1863441 Ohmic and degradation mechanisms of Ag contacts on p-type GaN 

    상세보기 crossref

  19. Appl. Phys. Lett. Xi 87 031111 2005 10.1063/1.1997270 Internal high-reflectivity omni-directional reflectors 

    상세보기 crossref

  20. J. Appl. Phys. Baik 108 063105 2010 10.1063/1.3478740 Light output enhancement of GaN-based flip-chip light-emitting diodes fabricated with SiO2/TiO2 distributed Bragg reflector coated on mesa sidewall 

    상세보기 crossref

  21. J. Electron. Mater. Zhao 32 1523 2003 10.1007/s11664-003-0124-0 Efficiency enhancement of InGaN/GaN light-emitting diodes with a back-surface distributed Bragg reflector 

    상세보기 crossref

  22. Appl. Phys. Lett. Malyutenko 97 251110 2010 10.1063/1.3529470 Current crowding effect on the ideality factor and efficiency droop in blue lateral InGaN/GaN light emitting diodes 

    상세보기 crossref

  23. Phys. Lett. Guo 78 3337 2001 Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates Appl 

  24. J. Appl. Phys. Chandramohan 115 054503 2014 10.1063/1.4863640 Performance evaluation of GaN light-emitting diodes using transferred graphene as current spreading layer 

    상세보기 crossref

  25. Jpn. J. Appl. Phys. Jeong 47 8811 2008 10.1143/JJAP.47.8811 InGaN/AlGaN ultraviolet light-emitting diode with a Ti3O5/Al2O3 distributed Bragg reflector 

    상세보기 crossref

  26. J. Appl. Phys. Kim 104 053111 2008 10.1063/1.2973685 Light extraction enhancement of GaN-based light emitting diodes using MgF2/Al omnidirectional reflectors 

    상세보기 crossref

  27. Appl. Phys. Lett. Ryu 95 081114 2009 10.1063/1.3216578 Rate equation analysis of efficiency droop in InGaN light-emitting diodes 

    상세보기 crossref

  28. IEEE Photonics Technol. Lett. Wuu 17 288 2005 10.1109/LPT.2004.839012 Enhanced output power of near-ultraviolet InGaN?GaN LEDs grown on patterned sapphire substrates 

    상세보기 crossref

  29. IEEE Trans. Electron. Devices Lee 57 157 2010 10.1109/TED.2009.2034495 Comparison of InGaN-based LEDs grown on conventional sapphire and cone-shape-patterned sapphire substrate 

    상세보기 crossref

  30. Adv. Opt. Mater. Park 5 1600684 2017 10.1002/adom.201600684 3D Hierarchical indium tin oxide nanotrees for enhancement of light extraction in gaN-based light-emitting diodes 

    상세보기 crossref
LOADING...

관련 콘텐츠

이 논문과 함께 이용한 콘텐츠

저작권 관리 안내
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로