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NTIS 바로가기Applied surface science, v.477, 2019년, pp.220 - 225
Lee, Gil Jun (Department of Printed Electronics Engineering, Sunchon National University) , Hong, In Yeol (Department of Printed Electronics Engineering, Sunchon National University) , Kim, Tae Kyoung (Department of Printed Electronics Engineering, Sunchon National University) , Park, Hyun Jung (Department of Printed Electronics Engineering, Sunchon National University) , Oh, Seung Kyu (Department of Printed Electronics Engineering, Sunchon National University) , Cha, Yu-Jung (Department of Printed Electronics Engineering, Sunchon National University) , Park, Min Joo (School of Materials Science and Engineering, Ulsan National Institute of Science and Engineering (UNIST)) , Choi, Kyoung Jin (School of Materials Science and Engineering, Ulsan National Institute of Science and Engineering (UNIST)) , Kwak, Joon Seop (Department of Printed Electronics Engineering, Sunchon National University)
Abstract Two different SiO2/TiO2 distributed Bragg reflectors (DBR) with ITO ohmic contacts were investigated as p-type reflective electrodes in InGaN/GaN flip-chip light-emitting diodes (FC-LEDs). The DBR structures were designed to have reflectance over 95% at wavelengths of 400–520nm (DBR ...
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