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NTIS 바로가기Microelectronic engineering, v.209, 2019년, pp.6 - 9
Cao, Kaihua (Fert Beijing Institute, BDBC, Beihang University) , Cui, Hushan (Fert Beijing Institute, BDBC, Beihang University) , Zhang, Youguang (Fert Beijing Institute, BDBC, Beihang University) , Xiong, Huagang (School of Electronic and Information Engineering, Beihang University) , Wei, Jiaqi (Fert Beijing Institute, BDBC, Beihang University) , Wang, Lezhi (Fert Beijing Institute, BDBC, Beihang University) , Cai, Wenlong (Fert Beijing Institute, BDBC, Beihang University) , Liu, Yizheng (Fert Beijing Institute, BDBC, Beihang University) , Liu, Pan (Fert Beijing Institute, BDBC, Beihang University) , He, Xiaobin (Institute of Microelectronics of Chinese Academy of Sciences) , Li, Junjie (Institute of Microelectronics of Chinese Academy of Sciences) , Bai, Guobin (Institute of Microelectronics of Chinese Academy of Sciences PR China<) , Yu, Jiahan , Han, Jianghao , Gao, Jianfeng , Jiang, Qifeng , Hu, Yanpeng , Li, Lin , Tang, Bo , Zhang, Yue , Zhang, Peng , Zhang, Qihui , Liu, Shi , Lu, Yihong , Yang, Tao , Li, Junfeng , Radamson, Henry H. , Zhao, Chao , Zhao, Weisheng
Abstract In this work, a novel method consisting of side-wall passivation and a top-metal reveal process is proposed for spintronics devices based on magnetic tunnel junctions (MTJs). The method can efficiently protect ferromagnetic metals and magnesium oxide, which are the key materials of MTJs, a...
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