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Polishing Mechanism of TEOS-CMP with High-temperature Slurry by Surface Analysis 원문보기

Transactions on electrical and electronic materials, v.6 no.4, 2005년, pp.164 - 168  

Kim, Nam-Hoon (Research Institute of Energy Resources Technology, Chosun University) ,  Seo, Yong-Jin (Department of Electrical and Electronic Engineering, Daebul University) ,  Ko, Pil-Ju (Department of Electrical Engineering, Chosun University) ,  Lee, Woo-Sun (Department of Electrical Engineering, Chosun University)

Abstract ▼ AI-Helper 아이콘AI-Helper

Effects of high-temperature slurry were investigated on the chemical mechanical polishing (CMP) performance of tetra-ethyl ortho-silicate (TEOS) film with silica and ceria slurries by the surface analysis of X-ray photoelectron spectroscopy (XPS). The pH showed a slight tendency to decrease with inc...

주제어

#Chemical mechanical polishing (CMP)   #Tetra-ethyl ortho-silicate (TEOS)   #Slurry temperature   #Removal rate   #pH   #X-ray photoelectron spectroscopy (XPS)  

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제안 방법

  • A woollam, M-2000V). In order to understand the effects of temperature on chemical reactions between slurry and TEOS film, the variations of chemical composition of a surface was analyzed by XPS (VG-Scientific ESCALAB 250) measurement, The sample was immersed in slurries with a specific temperature for 60 minutes. Then it was transferred to analysis chamber for the XPS after air-drying.
  • However, the accurate reason for the increase of removal rate in TEOS-CMP could not be clearly presented[7]. In this study, the mechanism of TEOS-CMP by the high-temperature slurry was investigated using X-ray photoelectron spectroscopy (XPS).
  • TEOS samples were immersed in silica and ceria slurries at the different temperatures for 60 minutes in order to examine the slurry attacks. According to the proposed models of TEOS-CMP, the slurry solution weakens the Si-O bonds in TEOS film and softens the surface as it becomes hydrated with Si-OH bonds[ll].
  • The XPS analysis was performed to characterize the surface change for TEOS immersed in the both slurries with the different temperatures for 60 minutes. Figure 3(a) and Fig.
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참고문헌 (21)

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  7. P.-J. Ko, S.-W. Park, N.-H. Kim, Y-J. Seo, and W.-S. Lee, 'Polishing properties by change of slurry temperature in oxide CMP', J. of KIEEME(in Korean), Vol. 18, No.3, p. 219, 2005 

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  9. S. W. Park, C. B. Kim, S. Y. Kim, and Y. J. Seo, 'Design of experimental optimization for ULSI CMP process applications', Microelectron. Eng., Vol. 66, Iss. 1-4, p. 488, 2003 

    상세보기 crossref

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    상세보기 crossref

  13. C. D. Wagner, D. E. Passoja, H. F. Hillery, T. G. Kinisky, H. A. Six, W. T. Jansen, and J. A. Taylor, 'Auger and photoelectron line energy relationships in aluminum-oxygen and silicon-oxygen compounds', J. Vac. Sci. Technol., Vol. 21, No.4, p. 933, 1982 

  14. K. L. Smith and K. M. Black, 'Characterization of the treated surfaces of silicon alloyed pyrolytic carbon and SiC [artificial heat values]', J. Vac. Sci. Technol. A, Vol. 2, No.2, p. 744, 1984 

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  17. D. T. Clark and H. R. Thomas, 'Applications of ESCA to polymer chemistry. XI. Core and valence energy levels of a series of polymethacrylates', J. Polym. Sci. Pol. Chem. Ed., Vol. 14, No.7, p. 1701, 1976 

  18. D. T. Clark and H. R. Thomas, 'Applications of ESCA to polymer chemistry. XVII. Systematic investigation of the core levels of simple homopolymers', J. Polym. Sci. Pol. Chem. Ed., Vol. 16, No.4, p. 791, 1978 

  19. J. S. Hammond, J. W. Holubka, J. E. deVries, and R. A. Dickie, 'The application of x-ray photo-electron spectroscopy to a study of interfacial composition in corrosion-induced paint de-adhesion', Corros. Sci., Vol. 21, Iss. 3, p. 239, 1981 

  20. F. C. Bums and J. D. Swalen, 'X-ray photoelectron spectroscopy of cadmium arachidate mono1ayers on various metal surfaces', J. Phys. Chem., Vol. 86, Iss. 26, p. 5123, 1982 

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