[논문]Novel metallization processes for sub-100 nm magnetic tunnel junction devices

Cao, Kaihua; Cui, Hushan; Zhang, Youguang; Xiong, Huagang; Wei, Jiaqi; Wang, Lezhi; Cai, Wenlong; Liu, Yizheng; Liu, Pan; He, Xiaobin; Li, Junjie; Bai, Guobin; Yu, Jiahan; Han, Jianghao; Gao, Jianfeng; Jiang, Qifeng; Hu, Yanpeng; Li, Lin; Tang, Bo; Zhang, Yue; Zhang, Peng; Zhang, Qihui; Liu, Shi; Lu, Yihong; Yang, Tao; Li, Junfeng; Radamson, Henry H.; Zhao, Chao; Zhao, Weisheng

doi:10.1016/j.mee.2019.01.010

Novel metallization processes for sub-100 nm magnetic tunnel junction devices

Microelectronic engineering, v.209, 2019년, pp.6 - 9

Cao, Kaihua (Fert Beijing Institute, BDBC, Beihang University) , Cui, Hushan (Fert Beijing Institute, BDBC, Beihang University) , Zhang, Youguang (Fert Beijing Institute, BDBC, Beihang University) , Xiong, Huagang (School of Electronic and Information Engineering, Beihang University) , Wei, Jiaqi (Fert Beijing Institute, BDBC, Beihang University) , Wang, Lezhi (Fert Beijing Institute, BDBC, Beihang University) , Cai, Wenlong (Fert Beijing Institute, BDBC, Beihang University) , Liu, Yizheng (Fert Beijing Institute, BDBC, Beihang University) , Liu, Pan (Fert Beijing Institute, BDBC, Beihang University) , He, Xiaobin (Institute of Microelectronics of Chinese Academy of Sciences) , Li, Junjie (Institute of Microelectronics of Chinese Academy of Sciences) , Bai, Guobin (Institute of Microelectronics of Chinese Academy of Sciences PR China<) , Yu, Jiahan , Han, Jianghao , Gao, Jianfeng , Jiang, Qifeng , Hu, Yanpeng , Li, Lin , Tang, Bo , Zhang, Yue , Zhang, Peng , Zhang, Qihui , Liu, Shi , Lu, Yihong , Yang, Tao , Li, Junfeng , Radamson, Henry H. , Zhao, Chao , Zhao, Weisheng

Abstract ▼ AI-Helper

Abstract In this work, a novel method consisting of side-wall passivation and a top-metal reveal process is proposed for spintronics devices based on magnetic tunnel junctions (MTJs). The method can efficiently protect ferromagnetic metals and magnesium oxide, which are the key materials of MTJs, and effectively establish electrical contact with the interconnect metals for perpendicular MTJs (p-MTJs). The scheme consists of the passivation of MTJs with dual dielectrics – silicon nitride and silicon oxide – followed by planarization and selective wet etching. The proposed integration scheme was successfully demonstrated with 80-nm-diameter p-MTJ devices. Highlights A method is proposed for interconnect processes in MTJ-based spintronic devices. It consists of side-wall passivation with two dielectrics and top-metal opening. The top electrode is revealed through planarization and selective wet etching. MTJ materials are protected while forming contacts with interconnect metals. The proposed scheme was demonstrated with 80-nm-diameter p-MTJ devices.

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Novel metallization processes for sub-100 nm magnetic tunnel junction devices

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