[논문]Influence of oxygen partial pressure in In-Sn-Ga-O thin-film transistors at a low temperature

Oh, Changyong; Jang, Hyunjae; Kim, Hyeong Wook; Jung, Hyunjae; Park, Hyungryul; Cho, Johann; Kim, Bo Sung

doi:10.1016/j.jallcom.2019.07.091

Influence of oxygen partial pressure in In-Sn-Ga-O thin-film transistors at a low temperature

Journal of alloys and compounds, v.805, 2019년, pp.211 - 217

Oh, Changyong (Department of Applied Physics, Korea University) , Jang, Hyunjae (Department of Applied Physics, Korea University) , Kim, Hyeong Wook (Department of Applied Physics, Korea University) , Jung, Hyunjae (Department of Applied Physics, Korea University) , Park, Hyungryul (R&D Group, Samsung Corning Advanced Glass) , Cho, Johann (R&D Group, Samsung Corning Advanced Glass) , Kim, Bo Sung (Department of Applied Physics, Korea University)

Abstract ▼ AI-Helper

Abstract We examined the electrical properties of low-temperature-processed top-gate In-Sn-Ga-O (ITGO) thin-film transistors (TFTs) by rf/dc-sputtering with different oxygen partial pressures (PO2). As PO2 changed from 0 to 50.0%, the ITGO TFT showed various electrical characteristics such as from conductor-like behavior to transfer curves with positive-shifted threshold voltages (V th ). The TFT at PO2 of 25.0% afforded the best performance, exhibiting field-effect mobility of 14.8 cm2V−1s−1, V th of 0.56 V, and subthreshold slope of 0.16 Vdec−1 with reasonable electrical stability for gate bias stress. From various analysis techniques, we found that the TFT characteristics and the electrical stability strongly depended on the metal-oxygen surface states of the ITGO films influenced by PO2 during the sputtering process. Highlights Electrical properties of In–Sn-Ga-O (ITGO) thin films with different annealing temperatures. Fabrication of ITGO thin-film transistors (TFTs) by rf/dc-sputtering with different oxygen partial pressures (PO2). The changes of electrical characteristics of the ITGO TFTs with increasing PO2 from 0 to 50.0%. The TFT characteristics strongly depended on interface states of the ITGO films influenced by PO2.

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Influence of oxygen partial pressure in In-Sn-Ga-O thin-film transistors at a low temperature

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Influence of oxygen partial pressure in In-Sn-Ga-O thin-film transistors at a low temperature

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