Abstract ▼ AI-Helper

As a next generation lithography (NGL) technology for VLSI semiconductor fabrication, electron beam, ion beam, X-ray and extreme ultraviolet(EUV) are considered as possible candidates. Among these methods, EUV lithography(EUVL) is thought to be the most probable because it is easily realized by impr...

As a next generation lithography (NGL) technology for VLSI semiconductor fabrication, electron beam, ion beam, X-ray and extreme ultraviolet(EUV) are considered as possible candidates. Among these methods, EUV lithography(EUVL) is thought to be the most probable because it is easily realized by improving current optical lithography technology. In order to set EUV radiation which can be applied to EUVL, it is essential to generate very high density and high temperature plasma stably. The method using a pulse power laser and a high voltage pulse discharge is commonly used to accomplish such a high density and high temperature plasma. In this paper we review the recent trends of the EUV generation technique by high density and high temperature plasma.