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Abstract ▼ AI-Helper

The influence of temperature variation (25～125$^{\circ}C$) on poly-Si thin-film transistors (TFT's) was investigated by examining the electrical properties change of poly-Si films formed by solid phase crystallization (SPC). The n-channel poly-Si TFT's fabricated by SPC with channe...

The influence of temperature variation (25～125$^{\circ}C$) on poly-Si thin-film transistors (TFT's) was investigated by examining the electrical properties change of poly-Si films formed by solid phase crystallization (SPC). The n-channel poly-Si TFT's fabricated by SPC with channel length of 1.5 and loon ,respectively, exhibit good characteristics with a high ${\mu}$$_<$TEX>FE/ ($\geq$82 and $\geq$60$\textrm{cm}^2$/V-s in 1.5 and 10$\mu\textrm{m}$, respectively), low V$_<$TEX>t/, ($\leq$1.52 and $\leq$ 2.75V in 1.5 and 10$\mu\textrm{m}$, respectively), low S$_<$TEX>t/, and good ON-OFF characteristics in spite of temperature variation. Thus, poly-Si films formed by SPC can be applied for the application to poly-Si TFT liquid crystal display with peripheral integrated circuits.