[국내논문]Fabrication of polycrystalline 3C-SiC diode for harsh environment micro chemical sensors and their characteristics 극한 환경 마이크로 화학센서용 다결정 3C-SiC 다이오드 제작과 그 특성원문보기
This paper describes the fabrication and characteristics of polycrystalline 3C-SiC thin film diodes for extreme environment applications, in which the this thin film was deposited onto oxidized Si wafers by APCVD using HMDS In this work, the optimized growth temperature and HMDS flow rate were ...
This paper describes the fabrication and characteristics of polycrystalline 3C-SiC thin film diodes for extreme environment applications, in which the this thin film was deposited onto oxidized Si wafers by APCVD using HMDS In this work, the optimized growth temperature and HMDS flow rate were $1,100^{\circ}C$ and 8sccm, respectively. A Schottky diode with a Au, Al/poly 3C-SiC/$SiO_2$/Si(n-type) structure was fabricated and its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84V, over 140V, 61nm, and $2.7{\times}10^{19}cm^2$, respectively. To produce good ohmic contact, Al/3C-SiC were annealed at 300, 400, and $500^{\circ}C$ for 30min under a vacuum of $5.0{\times}10^{-6}$Torr. The obtained p-n junction diode fabricated by poly 3C-SiC had similar characteristics to a single 3C-SiC p-n junction diode.
This paper describes the fabrication and characteristics of polycrystalline 3C-SiC thin film diodes for extreme environment applications, in which the this thin film was deposited onto oxidized Si wafers by APCVD using HMDS In this work, the optimized growth temperature and HMDS flow rate were $1,100^{\circ}C$ and 8sccm, respectively. A Schottky diode with a Au, Al/poly 3C-SiC/$SiO_2$/Si(n-type) structure was fabricated and its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84V, over 140V, 61nm, and $2.7{\times}10^{19}cm^2$, respectively. To produce good ohmic contact, Al/3C-SiC were annealed at 300, 400, and $500^{\circ}C$ for 30min under a vacuum of $5.0{\times}10^{-6}$Torr. The obtained p-n junction diode fabricated by poly 3C-SiC had similar characteristics to a single 3C-SiC p-n junction diode.
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가설 설정
1. (a) Schematic view of ohmic contact and (b) I-V characteristics of ohmic contact as a function of the annealing temperature.
제안 방법
The thickness of Al was 5,000A. These devices were annealed at 300, 400, and 500X} for 30 min under vacuum (5 x lOeorr) and the current -voltage (I-V) characteristics were measured as a function of annealing temperature to investigate their electrical properties.
In order to obtain the electrical properties of poly 3C-SiC, the I-V and C-V characteristics were investigated. We measured capacitance by HP4192A and calculated the carrier density and thickness of the depletion layer with equations (1) and (2), respectively.
Si substratesby APCVD using HMDS. In order to investigate the electrical properties of poly 3C-SiC, we evaluated 난le characteristics of the Au/poly SC-SiC/SiOz/Si (n-type) Schottky contact such as the threshold voltage (Vd) and the breakdown voltage, which were 0.84 V and over 140V, respectively. In addition, the thickness of the depletion layer of the poly 3C-SiC thin film using doping consistence (Nd = 2.
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