In this paper we have proposed a novel structure T-shaped channel TFET., which is experimentally demonstrated for the first time and investigated its performance and conduct. This structure have surpassing advantages over planar conventional TFET in terms of recorded lower OFF current and thus signi...
In this paper we have proposed a novel structure T-shaped channel TFET., which is experimentally demonstrated for the first time and investigated its performance and conduct. This structure have surpassing advantages over planar conventional TFET in terms of recorded lower OFF current and thus significant suppression of ambipolar conduction and improved ON current and thus higher Ion/Ioff ratio. Three such T-shaped channel structures are simulated and named according to the material used: Silicon based-T Channel-Dual Gate TFET (Si-TC-DG-TFET), Silicon-Gallium Arsenide based-T Channel-Dual Gate TFET (Si-GaAs-TC-DG-TFET) and Gallium Arsenide based-T Channel-Dual Gate TFET (GaAs-TC-DG-TFET). All the fundamental device parameters are analyzed for comparative study to obtain appropriate material that can be used to get optimized results and complex investigate and demonstrate the effects of T-Channel approach which has commanding outcomes on all characteristics in a 2D TFET model. All the simulations are done in Silvaco, Atlas.
In this paper we have proposed a novel structure T-shaped channel TFET., which is experimentally demonstrated for the first time and investigated its performance and conduct. This structure have surpassing advantages over planar conventional TFET in terms of recorded lower OFF current and thus significant suppression of ambipolar conduction and improved ON current and thus higher Ion/Ioff ratio. Three such T-shaped channel structures are simulated and named according to the material used: Silicon based-T Channel-Dual Gate TFET (Si-TC-DG-TFET), Silicon-Gallium Arsenide based-T Channel-Dual Gate TFET (Si-GaAs-TC-DG-TFET) and Gallium Arsenide based-T Channel-Dual Gate TFET (GaAs-TC-DG-TFET). All the fundamental device parameters are analyzed for comparative study to obtain appropriate material that can be used to get optimized results and complex investigate and demonstrate the effects of T-Channel approach which has commanding outcomes on all characteristics in a 2D TFET model. All the simulations are done in Silvaco, Atlas.
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