[해외논문] Reliability Investigation of 4H-SiC MOSFET Based on TCAD Simulation

Electronic Packaging Technology (ICEPT), 2018 19th International Conference on, 2018 Aug, 2018년, pp.956 - 960  

Luo, Houcai (School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin, 541004, China) ,  Huang, Yiping (School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin, 541004, China) ,  Zheng, Kai (College of Optoelectronic Engineering, Chongqing University, Chongqing, 400044, China) ,  Tan, Chunjian (School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin, 541004, China) ,  Wang, Liming (School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin, 541004, China) ,  Wang, Shaogang (School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin, 541004, China) ,  Ye, Huaiyu (College of Optoelectronic Engineering, Chongqing University, Chongqing, 400044, China) ,  Chen, Xianping (School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin, 541004, China)