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NTIS 바로가기Devices for Integrated Circuit (DevIC), 2019, 2019 Mar, 2019년, pp.461 - 464
Sahoo, Sasmita (Dept. of Electronics & Communication Engg., Siksha ‘O’ Anusandhan deemed to be University, Bhubaneswar, India) , Dash, Sidhartha (Dept. of Electronics & Communication Engg., Siksha ‘O’ Anusandhan deemed to be University, Bhubaneswar, India) , Mishra, Guru Prasad (Dept. of Electronics & Telecommunication Engg., NIT Raipur, Raipur, India)
In this paper a simulated device configuration is introduced for doping less charge plasma tunnel FET (CP-TFET) to improving the drain current and ambipolar nature. To achieve these improvements, we have proposed drain electrode work-function modulation engineering along with hetero dielectric in CP...
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