Liou, Chengshiun
(Ph. D. Program of Electrical and Communications Engineering, Feng Chia University,Taiwan)
,
Hsieh, Mingyu
(Feng Chia University,Department of Automatic Control Engineering,Taiwan)
,
Shih, Fuchi
(Feng Chia University,Department of Automatic Control Engineering,Taiwan)
,
Huang, Yuanyuan
(Feng Chia University,Department of Automatic Control Engineering,Taiwan)
,
Hu, Zihsong
(Feng Chia University,Department of Automatic Control Engineering,Taiwan)
,
Tsou, Chingfu
(Feng Chia University,Department of Automatic Control Engineering,Taiwan)
,
Fang, Weileun
(National Tsing Hua University,Department of Power Mechanical Engineering,Taiwan)
This paper proposes a new design of a Micro-LED display with a sapphire micro-reflector array. This novel technology uses an ICP etching process to fabricate a V-shaped trench in sapphire substrate. With the microloading effect, a specific sapphire micro-reflector is created under each Micro-LED, wh...
This paper proposes a new design of a Micro-LED display with a sapphire micro-reflector array. This novel technology uses an ICP etching process to fabricate a V-shaped trench in sapphire substrate. With the microloading effect, a specific sapphire micro-reflector is created under each Micro-LED, which can be used to converge the light rays and therefore, improve the display quality of a Micro-LED. In this study, the feasibility of a sapphire and GaN etching process and the optical performance of a Micro-LED have been evaluated and measured by experimentation. It was confirmed that the proposed Micro-LED display has an improved lighting performance, while increasing 55% in maximum brightness.
This paper proposes a new design of a Micro-LED display with a sapphire micro-reflector array. This novel technology uses an ICP etching process to fabricate a V-shaped trench in sapphire substrate. With the microloading effect, a specific sapphire micro-reflector is created under each Micro-LED, which can be used to converge the light rays and therefore, improve the display quality of a Micro-LED. In this study, the feasibility of a sapphire and GaN etching process and the optical performance of a Micro-LED have been evaluated and measured by experimentation. It was confirmed that the proposed Micro-LED display has an improved lighting performance, while increasing 55% in maximum brightness.
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