The invention provides an ESD protection structure, compatible with the bipolar-CMOS-DMOS (BCD) processes, which provides an enhanced protection performance and better heat dissipation performance. The design of the ESD structures in present invention takes advantage of bipolar punch characteristic
The invention provides an ESD protection structure, compatible with the bipolar-CMOS-DMOS (BCD) processes, which provides an enhanced protection performance and better heat dissipation performance. The design of the ESD structures in present invention takes advantage of bipolar punch characteristics of the parasitic bipolar structure to bypass the ESD current, thus significantly reducing the trigger voltage and increasing the ESD protection level. In addition, the ESD protection circuit of the present invention can improve heat dissipation by avoid current crowding near the surface.
대표청구항▼
What is claimed is: 1. An electrostatic discharge (ESD) protection structure, comprising: an P-type substrate having a buried layer therein, the P-type substrate further comprising: an N-type epitaxial layer above the buried layer; at least a first isolation structure and a second isolation struc
What is claimed is: 1. An electrostatic discharge (ESD) protection structure, comprising: an P-type substrate having a buried layer therein, the P-type substrate further comprising: an N-type epitaxial layer above the buried layer; at least a first isolation structure and a second isolation structure disposed at both sides of the N-type epitaxial layer; a first P-type body (P body) region and a second P-type body region respectively at one side of the first and second isolation structures; an N-type base region located between the first and the second P-type body regions, wherein the N-type base region, the first P-type body region and the second P-type body region are separated from each other; an N-type drain region disposed in and surrounded by the N-type base region; and a first P+ doped region and a first N+ doped region disposed in the first P-type body region, wherein the first P+ doped region is closer to the first isolation structure than the first N+ doped region; a second P+ doped region and a second N+ doped region disposed in the second P-type body region, wherein the second P+ doped region is closer to the second isolation structure than the second N+ doped region; and at least a first gate and a second gate disposed on the P-type substrate, wherein the first gate is disposed between the N-type drain region and the first P-type body region, while the second gate is disposed between the N-type drain region and the second P-type body region. 2. The ESD protection structure of claim 1, wherein an N-type sinker layer is further included within the N-type epitaxial layer, extending between the N-type drain region and the buried layer. 3. The ESD protection structure of claim 2, wherein the buried layer is an N-buried layer, extending from the first P-type body region to the second P-type body region. 4. The ESD protection structure of claim 2, wherein the buried layer is an N+buried layer, extending from the first P-type body region to the second P-type body region. 5. The ESD protection structure of claim 2, wherein a width of the N-type sinker layer is smaller than that of the N-type drain region. 6. An electrostatic discharge (ESD) protection structure, comprising: an P-type substrate having a buried layer therein, the P-type substrate further comprising: an N-type epitaxial layer above the buried layer; at least a first isolation structure and a second isolation structure disposed at both sides of the N-type epitaxial layer; a first P-type body region and a second P-type body region respectively at one side of the first and the second isolation structures; an N-type sinker layer and an N-type drain region between the first and the second P-type body regions, wherein the N-type drain region, the first P-type body region and the second P-type body region are separated from each other, and the sinker layer extending between the N-type drain region and the buried layer; a first P+ doped region and a first N+ doped region disposed in the first P-type body region, wherein the first P+ doped region is closer to the first isolation structure than the first N+ doped region, a second P+ doped region and a second N+ doped region disposed in the second P-type body region, wherein the second P+ doped region is closer to the second isolation structure than the second N+ doped region; and, at least a first gate and a second gate disposed on the P-type substrate, wherein the first gate is disposed between the N-type drain region and the first P-type body region, while the second gate is disposed between the N-type drain region and the second P-type body region. 7. The ESD protection structure of claim 6, wherein the buried layer is an N-buried layer, extending from the first P-type body region to the second P-type body region. 8. The ESD protection structure of claim 6, wherein the buried layer is an N+buried layer, extending from the first P-type body region to the second P-type body region. 9. The ESD protection structure of claim 6, wherein a width of the N-type sinker layer is smaller than that of the N-type drain region. 10. An electrostatic discharge (ESD) protection circuit, comprising: a substrate of a first conductive type having a buried layer of a second conductive type therein, the substrate further comprising: an epitaxial layer of the second conductive type above the buried layer; at least a first isolation structure and a second isolation structure disposed at both sides of the epitaxial layer; a first body region of the first conductive type and a second body region of the first conductive type respectively at one side of the first and the second isolation structures; a sinker layer of the second conductive type and a drain region of the second conductive type between the first and the second body regions of the first conductive type, wherein the drain region, the first and the second body regions of the first conductive type are separated from each other; a first doped region of the first conductive type and a second doped region of the second conductive type disposed in the first body region, wherein the first doped region is closer to the first isolation structure than the second doped region; and a third doped region of the first conductive type and a fourth doped region of the second conductive type disposed in the second body region, wherein the third doped region is closer to the second isolation structure than the fourth doped region; and at least a first gate and a second gate disposed on the substrate, wherein the first gate is disposed between the drain region and the first body region, while the second gate is disposed between the drain region and the second body region. 11. The ESD protection structure of claim 10, wherein the first conductive type is P-type and the second conductive type is N-type. 12. The ESD protection structure of claim 11, wherein the buried layer is an N-buried layer, extending from the first body region to the second body region. 13. The ESD protection structure of claim 11, wherein the buried layer is an N+buried layer, extending from the first body region to the second body region. 14. The ESD protection structure of claim 10, wherein a width of the sinker layer is smaller than that of the drain region. 15. The ESD protection structure of claim 10, wherein a base region of the second conductive type is further included within the epitaxial layer and surrounds the drain region, and the base region is separate from the first and second body regions. 16. The ESD protection structure of claim 15, wherein the first conductive type is P-type and the second conductive type is N-type. 17. The ESD protection structure of claim 16, wherein the buried layer is an N-buried layer, extending from the first body region to the second body region. 18. The ESD protection structure of claim 16, wherein the buried layer is an N+buried layer, extending from the first body region to the second body region.
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