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NTIS 바로가기電子工學會論文誌. Journal of the Institute of Electronics Engineers of Korea. SD, 반도체, v.46 no.1 = no.379, 2009년, pp.1 - 6
박재영 ((주)동부하이텍) , 송종규 ((주)동부하이텍) , 장창수 ((주)동부하이텍) , 김산홍 ((주)동부하이텍) , 정원영 ((주)동부하이텍) , 김택수 ((주)동부하이텍)
The holding voltage of high-voltage devices under the snapback breakdown condition has been known to be much smaller than the operating voltage. Such characteristics cause high-voltage ICs to be susceptible to the transient latch-up failure in the practical system applications, especially when these...
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