Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about −600 MPa and 600 MPa and hardness of at least about 12 GPa. In some embodiments, a hardmask film is prepared by depositing multiple sub-layers of doped or undoped silicon carbide
Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about −600 MPa and 600 MPa and hardness of at least about 12 GPa. In some embodiments, a hardmask film is prepared by depositing multiple sub-layers of doped or undoped silicon carbide using multiple densifying plasma post-treatments in a PECVD process chamber. In some embodiments, a hardmask film includes a high-hardness boron-containing film selected from the group consisting of SixByCz, SixByNz, SixByCzNw, BxCy, and BxNy. In some embodiments, a hardmask film includes a germanium-rich GeNx material comprising at least about 60 atomic % of germanium. These hardmasks can be used in a number of back-end and front-end processing schemes in integrated circuit fabrication.
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1. A method of forming a hardmask film on a semiconductor substrate, the method comprising: receiving a semiconductor substrate in a plasma-enhanced chemical vapor deposition (PECVD) process chamber; andforming a hardmask film having a hardness of greater than about 12 GPa, and a stress of between a
1. A method of forming a hardmask film on a semiconductor substrate, the method comprising: receiving a semiconductor substrate in a plasma-enhanced chemical vapor deposition (PECVD) process chamber; andforming a hardmask film having a hardness of greater than about 12 GPa, and a stress of between about −600 MPa and 600 MPa by PECVD, wherein the PECVD hardmask deposition process comprises depositing a high-hardness boron-containing film selected from the group consisting of SixByCz, SixByNz, SixByCzNw, BxNy, and BxCy. 2. The method of claim 1, wherein the film has a stress of between about −300 MPa and 300 MPa. 3. The method of claim 1, wherein the film has a stress of between about 0 MPa and 600 MPa. 4. The method of claim 1, wherein the film has a hardness of at least about 16 GPa. 5. The method of claim 1, wherein the hardmask deposition process comprises providing LF plasma and HF plasma, wherein the power density for LF plasma is greater than the power density for HF plasma. 6. The method of claim 1, wherein the PECVD hardmask deposition process comprises depositing high-hardness SixByCz film, and wherein the deposition comprises: flowing a process gas comprising a boron-containing precursor, a silicon-containing precursor and a carrier gas into the process chamber; andforming a dual frequency plasma, wherein LF/HF power ratio is at least about 1.5, to deposit a high-hardness SixByCz film on the substrate. 7. The method of claim 6, wherein the formed high-hardness SixByCz film has a ratio of IR peak areas for BC/[BC+SiC] of at least about 0.35. 8. The method of claim 1, wherein the formed hardmask layer is deposited over a layer of dielectric having a dielectric constant of less than about 2.8, and wherein the formed hardmask film has an etch selectivity of at least about 8:1 versus the dielectric in a dry plasma etch. 9. The method of claim 1, wherein the formed hardmask layer is deposited over a layer of polysilicon. 10. The method of claim 1, wherein the hardmask is formed at a temperature of less than about 400° C. 11. The method of claim 1, wherein the PECVD hardmask deposition process comprises forming a high-hardness SixByCzNw film. 12. The method of claim 1, wherein the PECVD hardmask deposition process comprises forming a high-hardness BxCy film. 13. The method of claim 12, wherein the PECVD hardmask deposition process comprises flowing a boron-containing precursor and a saturated or unsaturated hydrocarbon into the process chamber and forming a dual frequency plasma, wherein the power density of LF plasma is greater than the power density of HF plasma, to deposit a high-hardness BxCy film. 14. The method of claim 13, further comprising flowing an inert gas into the process chamber. 15. The method of claim 13, further comprising flowing H2 into the process chamber. 16. A film comprising a material selected from the group consisting of SixByCz, SixByNz, SixByCzNw, BxNy, and BxCy, the film having hardness of at least about 12 GPa and a stress of between about −600 MPa and 600 MPa. 17. An apparatus for depositing a hardmask film, the apparatus comprising: (a) a process chamber configured for formation of plasma;(b) a support for a wafer substrate configured for holding the wafer substrate in position during hardmask deposition, and(c) a controller comprising program instructions for a process of: depositing a high-hardness boron-containing film selected from the group consisting of SixByCz, SixByNz, SixByCzNw, BxNy, and BxCy.
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