IPC분류정보
국가/구분 |
United States(US) Patent
공개
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0825792
(2015-08-13)
|
공개번호 |
US-0282721
(2016-09-29)
|
우선권정보 |
KR-10-2015-0040963 (2015-03-24) |
발명자
/ 주소 |
- SEOL, Minsu
- KIM, Sangwon
- SHIN, Hyeonjin
- PARK, Seongjun
- CHO, Yeonchoo
|
출원인 / 주소 |
|
인용정보 |
피인용 횟수 :
0 인용 특허 :
0 |
초록
A hardmask composition includes a plurality of graphene nanosheets doped with boron (B) and/or nitrogen (N) and a solvent. A size of the graphene nanosheet may be in a range of about 5 nm to about 1000 nm. The hardmask composition may include an aromatic ring-containing material.
대표청구항
▼
1. A hardmask composition comprising: a plurality of graphene nanosheets, each of the plurality of graphene nanosheets being doped with at least one of boron (B) and nitrogen (N); anda solvent. 2. The hardmask composition of claim 1, wherein a size of each of the plurality of graphene nanosheets is
1. A hardmask composition comprising: a plurality of graphene nanosheets, each of the plurality of graphene nanosheets being doped with at least one of boron (B) and nitrogen (N); anda solvent. 2. The hardmask composition of claim 1, wherein a size of each of the plurality of graphene nanosheets is in a range of about 5 nm to about 1000 nm, andeach of the plurality of graphene nanosheets includes 300 layers of graphene or less. 3. The hardmask composition of claim 1, wherein each of the plurality of graphene nanosheets includes at least one of B and N in an amount ranging from about 1 atom % to about 35 atom %. 4. The hardmask composition of claim 1, wherein the plurality of graphene nanosheets has an intensity ratio of a D mode peak to a G mode peak of about 2 or lower as obtained from Raman spectroscopy analysis. 5. The hardmask composition of claim 1, wherein the plurality of graphene nanosheets has an intensity ratio of a 2D mode peak to a G mode peak of about 0.01 or higher as obtained from Raman spectroscopy analysis. 6. The hardmask composition of claim 1, wherein a sp2 carbon bond fraction of each of the plurality of graphene nanosheets is equal to or greater than a sp3 carbon bond fraction. 7. The hardmask composition of claim 1, further comprising: a first material including one of an aromatic ring-containing monomer, a polymer including an aromatic ring-containing monomer as a repeating unit and a mixture thereof. 8. The hardmask composition of claim 1, wherein an amount of the plurality of graphene nanosheets is in a range of about 0.1 wt % to about 40 wt % based on the total weight of the hardmask composition. 9. The hardmask composition of claim 1, wherein the solvent is at least one of water, methanol, isopropanol, ethanol, N,N-dimethylformamide, N-methylpyrrolidone, dichloroethane, dichlorobenzene, N,N-dimethylsulfoxide, xylene, aniline, propylene glycol, propylene glycol diacetate, methoxypropanediol, diethyleneglycol, gamma-butyrolactone, acetylacetone, cyclohexanone, propylene glycol monomethyl ether acetate, γ-butyrolactone, dichloroethane, O-dichlorobenzene, nitromethane, tetrahydrofuran, nitromethane, dimethyl sulfoxide, nitrobenzene, butyl nitrite, methylcellosolve, ethylcellosolve, diethylether, diethyleneglycolmethylether, diethyleneglycolethylether, dipropyleneglycolmethylether, toluene, hexane, methylethylketone, methylisoketone, hydroxymethylcellulose, and heptanes. 10. A method of forming a pattern, the method comprising: forming an etching layer on a substrate;providing a hardmask composition on the etching layer to form a hardmask, the hardmask composition including, a plurality of graphene nanosheets, each of the plurality of graphene nanosheets being doped with at least one of boron (B) and nitrogen (N), anda solvent;forming a photoresist layer on the hardmask;forming a hardmask pattern by patterning the hardmask using the photoresist layer as an etching mask; andetching the etching layer using the hardmask pattern as an etching mask. 11. The method of claim 10, further comprising: heat-treating the hardmask composition during or after the providing. 12. The method of claim 10, wherein a thickness of the hardmask is in a range of about 10 nm to about 10,000 nm. 13. The method of claim 10, wherein the providing provides the hardmask composition by one of spin coating, air spraying, electrospraying, dip coating, spray coating, doctor blade, and bar coating.
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