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Embodiments herein may relate to a technique for generating a via in a substrate. Specifically, the technique may include coupling a polyethylene terephthalate (PET) layer, a protective metal layer, and a build-up layer to a metal layer. The process may further include etching a via in the PET layer

Embodiments herein may relate to a technique for generating a via in a substrate. Specifically, the technique may include coupling a polyethylene terephthalate (PET) layer, a protective metal layer, and a build-up layer to a metal layer. The process may further include etching a via in the PET layer, the protective metal layer, and at least a portion of the build-up layer. The process may further include performing a plasma desmear process on the substrate and then peeling the PET layer to remove the PET layer and the protective metal layer. Other embodiments may be described and/or claimed.

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1. A substrate comprising: a metal layer with a first side and a second side opposite the first side;a build-up layer with a first side and a second side opposite the first side, the first side of the build-up layer coupled with the first side of the metal layer, the second side having an average ro

1. A substrate comprising: a metal layer with a first side and a second side opposite the first side;a build-up layer with a first side and a second side opposite the first side, the first side of the build-up layer coupled with the first side of the metal layer, the second side having an average roughness (Ra) of between approximately 50 nanometers (nm) and approximately 100 nm; anda frustoconical via in the build-up layer, wherein a first diameter of a first side of the frustoconical via at the first side of the build-up layer is smaller than a second diameter of a second side of the frustoconical via at the second side of the build-up layer;wherein the frustoconical via has an approximately linear slope between the first side of the frustoconical via and the second side of the frustoconical via. 2. The substrate of claim 1, wherein the second side of the build-up layer includes one or more traces with a respective trace width of less than approximately 3 micrometers (μm) and a trace space of less than approximately 3 μm. 3. The substrate of claim 1, wherein the metal layer includes copper. 4. (canceled) 5. The substrate of claim 1, wherein the metal layer is exposed at the first side of the frustoconical via. 6. The substrate of claim 1, wherein the build-up layer includes an organic resin and a hardener with an inorganic filler. 7. A method comprising: coupling a polyethylene terephthalate (PET) layer, a protective metal layer, and a build-up layer to a metal layer such that the build-up layer is between the PET layer and the metal layer, and the PET layer is between the protective metal layer and the build-up layer;generating a frustoconical via in the protective metal layer, the PET layer, and the build-up layer;performing a desmear process such that the metal layer is exposed in the frustoconical via; andremoving the PET layer from the build-up layer. 8. The method of claim 7, wherein removing the PET layer includes peeling the PET layer. 9. The method of claim 7, wherein removing the PET layer includes removing the protective metal layer. 10. The method of claim 7, wherein the desmear process is a plasma desmear process. 11. The method of claim 7, wherein the PET layer and the protective metal layer are coupled to one another prior to coupling the PET layer and the protective metal layer to the build-up layer. 12. The method of claim 7, wherein generating the frustoconical via includes laser drilling the frustoconical via. 13. The method of claim 7, wherein the frustoconical via has a first diameter that is coplanar with the protective metal layer and that is larger than a second diameter of the frustoconical via that is coplanar with the build-up layer. 14. The method of claim 7, wherein the PET film is a polyethylene naphthalate PET film. 15. A package comprising: a die coupled with a substrate; wherein the substrate includes:a metal layer with a first side and a second side opposite the first side;a build-up layer with a first side and a second side opposite the first side, the first side of the build-up layer coupled with the first side of the metal layer, the second side of the build-up layer having an average roughness (Ra) of between approximately 50 nanometers (nm) and approximately 100 nm; anda frustoconical via in the build-up layer, wherein a first diameter of a first side of the frustoconical via at the first side of the build-up layer is smaller than a second diameter of a second side of the frustoconical via at the second side of the build-up layer;wherein the frustoconical via has an approximately linear slope between the first side of the frustoconical via and the second side of the frustoconical via. 16. The package of claim 15, wherein the metal layer includes copper. 17. The package of claim 15, the second side of the build-up layer having one or more traces with a trace width of less than approximately 3 micrometers (μm) and a trace space of less than approximately 3 μm. 18. The package of claim 15, wherein the metal layer is exposed at the first side of the frustoconical via. 19. The package of claim 15, wherein the build-up layer includes an organic resin and a hardener with an inorganic filler. 20. The package of claim 15, wherein the die is a processor or a memory.