Systems and methods for processing films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a condensed matter (liquid or solid) of one or more precursors. A carrier gas is flowed through the condensed matter and push the droplets toward a su
Systems and methods for processing films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a condensed matter (liquid or solid) of one or more precursors. A carrier gas is flowed through the condensed matter and push the droplets toward a substrate placed in a substrate processing region. An inline pump connected with the aerosol generator can also be used to push the droplets towards the substrate. A direct current (DC) electric field is applied between two conducting plates configured to pass the droplets in-between. The size of the droplets is desirably reduced by application of the DC electric field. After passing through the DC electric field, the droplets pass into the substrate processing region and chemically react with the substrate to deposit or etch films.
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1. A method of forming a layer on a substrate, the method comprising: placing the substrate into a substrate processing region of a substrate processing chamber;placing a liquid precursor into an aerosol generator;flowing a carrier gas into the aerosol generator to produce aerosol droplets;applying
1. A method of forming a layer on a substrate, the method comprising: placing the substrate into a substrate processing region of a substrate processing chamber;placing a liquid precursor into an aerosol generator;flowing a carrier gas into the aerosol generator to produce aerosol droplets;applying an electric field to the aerosol droplets;flowing the aerosol droplets into the substrate processing region; andforming the layer on the substrate from the aerosol droplets. 2. The method of claim 1, wherein the layer is a self-assembled monolayer (SAM). 3. The method of claim 2, the self-assembled monolayer is selectively formed on exposed copper portions of the substrate but not on exposed dielectric portions of the substrate and the method further comprises forming a selectively deposited dielectric on the exposed dielectric portions but not on the exposed copper portions which are blocked by the self-assembled monolayer. 4. The method of claim 3, wherein the selectively deposited dielectric is one of silicon oxide, hafnium oxide, zirconium oxide, titanium oxide or titanium-doped silicon oxide. 5. The method of claim 1, wherein the liquid precursor includes one or more of octylphosphonic acid (CH3(CH2)6CH2—P(O)(OH)2), perfluorooctylphosphonic acid (CF3(CF2)5CH2—CH2—P(O)(OH)2), octadecylphosphonic acid (CH3(CH2)16CH2—P(O)(OH)2), decyl phosphonic acid, mesityl phosphonic acid, cyclohexyl phosphonic acid, hexyl phosphonic acid or butyl phosphonic acid. 6. The method of claim 1, wherein the layer is one of a II-VI or a III-V semiconductor. 7. The method of claim 1, wherein the layer is one of boron nitride, aluminum nitride, gallium arsenide, gallium phosphide, indium arsenide or indium antimonide. 8. The method of claim 1, wherein the layer is a metal-oxide. 9. The method of claim 1, wherein the layer consists of oxygen and a metal element. 10. The method of claim 1 wherein the electric field is a DC electric field having an electric field which points towards the substrate. 11. The method of claim 1, further comprising flowing a second precursor into the substrate processing region to form a monolayer on the layer. 12. A method of processing a layer on a substrate, the method comprising: placing the substrate into a substrate processing region of a substrate processing chamber;dissolving a solid precursor into a solvent to form a precursor solution within an aerosol generator;flowing a carrier gas into the aerosol generator to produce aerosol droplets;applying an electric field to the aerosol droplets;flowing the aerosol droplets into the substrate processing region; andetching the layer on the substrate by chemical reaction with the aerosol droplets. 13. The method of claim 12, wherein the layer consists of two elements. 14. The method of claim 12, further comprising flowing a second precursor into the substrate processing region to remove one monolayer from the layer. 15. The method of claim 12, wherein the electric field is a DC electric field having an electric field which points towards the substrate. 16. The method of claim 12, wherein the electric field has a magnitude between 500 V/cm and 20,000 V/cm. 17. The method of claim 12, wherein the aerosol droplets have a diameter between 3 nm and 75 nm. 18. A chamber for forming a film on a substrate, the chamber comprising: a heated carrier gas supply;an aerosol generator configured to receive a heated carrier gas from the heated carrier gas supply and configured to produce aerosol droplets from a condensed matter precursor;a precursor conduit configured to receive the aerosol droplets;a DC power supply;a top electrode and a bottom electrode configured to receive the aerosol droplets and receive a differential voltage from the DC power supply by way of vacuum electrical feedthroughs; wherein the differential voltage is applied between the top electrode and the bottom electrode to reduce a size of the aerosol droplets;a substrate pedestal disposed within a substrate processing region within the chamber, wherein the substrate pedestal is configured to support the substrate during processing of the film. 19. The chamber of claim 18, wherein the differential voltage is between 100 volts and 2 kvolts applied to form an electric field with a magnitude between 500 V/cm and 20,000 V/cm. 20. The chamber of claim 18, wherein the aerosol droplets have a diameter between 3 nm and 75 nm.
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