QLED DEVICE AND MANUFACTURING METHOD THEREOF, QLED DISPLAY PANEL AND QLED DISPLAY DEVICE
원문보기
IPC분류정보
국가/구분
United States(US) Patent
공개
국제특허분류(IPC7판)
H01L-051/00
H01L-051/50
H01L-021/02
출원번호
US-0865502
(2018-01-09)
공개번호
US-0294414
(2018-10-11)
우선권정보
CN-201710224387.2 (2017-04-07)
발명자
/ 주소
MEI, Wenhai
CHEN, Zhuo
ZHANG, Yuanming
출원인 / 주소
MEI, Wenhai
인용정보
피인용 횟수 :
0인용 특허 :
0
초록▼
A QLED device and manufacturing method thereof, a QLED display panel and a QLED display device are disclosed which improve the surface and internal structure of the quantum dot layer in the QLED devices. The method for manufacturing a QLED device includes forming a first electrode layer; forming a q
A QLED device and manufacturing method thereof, a QLED display panel and a QLED display device are disclosed which improve the surface and internal structure of the quantum dot layer in the QLED devices. The method for manufacturing a QLED device includes forming a first electrode layer; forming a quantum dot layer on the first electrode layer; infiltrating a mixed solvent containing a bifunctional molecule into the quantum dot layer so as to improve the structure of the quantum dot layer; and forming a second electrode layer on the quantum dot layer.
대표청구항▼
1. A method for manufacturing a QLED device, comprising: forming a first electrode layer;forming a quantum dot layer on the first electrode layer;infiltrating a mixed solvent containing a bifunctional molecule into the quantum dot layer so as to improve the structure of the quantum dot layer; andfor
1. A method for manufacturing a QLED device, comprising: forming a first electrode layer;forming a quantum dot layer on the first electrode layer;infiltrating a mixed solvent containing a bifunctional molecule into the quantum dot layer so as to improve the structure of the quantum dot layer; andforming a second electrode layer on the quantum dot layer. 2. The method according to claim 1, wherein the step of infiltrating the mixed solvent containing the bifunctional molecule into the quantum dot layer comprises: arranging the mixed solvent on the quantum dot layer; andraising temperature to a predetermined value. 3. The method according to claim 2, wherein the step of infiltrating the mixed solvent containing the bifunctional molecule into the quantum dot layer further comprises: rotating or vibrating the quantum dot layer. 4. The method according to claim 3, wherein the step of infiltrating the mixed solvent containing the bifunctional molecule into the quantum dot layer further comprises: performing an annealing process on the quantum dot layer. 5. The method according to claim 1, wherein a host material of the quantum dot layer is CdS, CdSe, ZnSe, InP, PbS, CsPbCl3, CsPbBr3, CsPbI3, CdS/ZnS, CdSe/ZnS, ZnSe, InP/ZnS, PbS/ZnS, CsPbCl3/ZnS, CsPbBr3/ZnS, or CsPbI3/ZnS. 6. The method according to claim 1, wherein the mixed solvent is composed of a benign solvent and a poor solvent of a host material of the quantum dot layer. 7. The method according to claim 6, wherein a material of the mixed solvent is selected from one of the following combinations: n-hexane/acetone, n-hexane/n-butanol, n-hexane/isopropanol, toluene/acetone, toluene/n-butanol, and toluene/isopropanol. 8. The method according to claim 6, wherein a volume ratio of the benign solvent to the poor solvent is in a range of 10:1 to 1:10. 9. The method according to claim 1, wherein the bifunctional molecule is ethylene glycol, 1,3-propanediol, ethanedithiol, or 1,3-propanedithiol. 10. The method according to claim 9, wherein a mass percentage of the bifunctional molecule in the mixed solvent is in a range of 1% to 10%. 11. The method according to claim 1, wherein the first electrode layer comprises an anode layer, a hole injection layer and a hole transport layer; and the step of forming the first electrode layer comprises: forming the anode layer, the hole injection layer and the hole transport layer sequentially; the second electrode layer comprises a cathode layer, an electron injection layer and an electron transport layer; and the step of forming the second electrode layer comprises: forming the electron transport layer, the electron injection layer and cathode layer sequentially. 12. A QLED device, comprising: a first electrode layer, a quantum dot layer and a second electrode layer stacked sequentially; wherein the quantum dot layer comprises a bifunctional molecule. 13. The QLED device according to claim 12, wherein a host material of the quantum dot layer is CdS, CdSe, ZnSe, InP, PbS, CsPbCl3, CsPbBr3, CsPbI3, CdS/ZnS, CdSe/ZnS, ZnSe, InP/ZnS, PbS/ZnS, CsPbCl3/ZnS, CsPbBr3/ZnS, or CsPbI3/ZnS. 14. The QLED device according to claim 12, wherein the bifunctional molecule is ethylene glycol, 1,3-propanediol, ethanedithiol, or 1,3-propanedithiol. 15. A QLED display panel, comprising: a substrate and a plurality of QLED devices according to claim 12 arranged in an array on a surface of the substrate. 16. A QLED display device comprising the QLED display panel according to claim 15. 17. The method according to claim 2, wherein a host material of the quantum dot layer is CdS, CdSe, ZnSe, InP, PbS, CsPbCl3, CsPbBr3, CsPbI3, CdS/ZnS, CdSe/ZnS, ZnSe, InP/ZnS, PbS/ZnS, CsPbCl3/ZnS, CsPbBr3/ZnS, or CsPbI3/ZnS. 18. The method according to claim 3, wherein a host material of the quantum dot layer is CdS, CdSe, ZnSe, InP, PbS, CsPbCl3, CsPbBr3, CsPbI3, CdS/ZnS, CdSe/ZnS, ZnSe, InP/ZnS, PbS/ZnS, CsPbCl3/ZnS, CsPbBr3/ZnS, or CsPbI3/ZnS. 19. The method according to claim 2, wherein the mixed solvent is composed of a benign solvent and a poor solvent of a host material of the quantum dot layer. 20. The method according to claim 3, wherein the mixed solvent is composed of a benign solvent and a poor solvent of a host material of the quantum dot layer.
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