An electrostatic chuck (ESC) structure is disclosed. The ESC includes a dielectric structure, an electrode, and a metal sheet. The electrode and the metal sheet are embedded in the dielectric structure. The fluctuation of heat distribution on the ESC is one source of problems during implementation o
An electrostatic chuck (ESC) structure is disclosed. The ESC includes a dielectric structure, an electrode, and a metal sheet. The electrode and the metal sheet are embedded in the dielectric structure. The fluctuation of heat distribution on the ESC is one source of problems during implementation of a process. The metal sheet is used to provide equal distribution of heat on the ESC.
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1. An electrostatic chuck (ESC), comprising: a dielectric structure having a top surface;an electrode embedded in the dielectric structure; anda metal sheet embedded in the dielectric structure and disposed between the electrode and the top surface of the dielectric structure;wherein a thermal condu
1. An electrostatic chuck (ESC), comprising: a dielectric structure having a top surface;an electrode embedded in the dielectric structure; anda metal sheet embedded in the dielectric structure and disposed between the electrode and the top surface of the dielectric structure;wherein a thermal conductivity of the metal sheet is greater than a thermal conductivity of dielectric structure and a thermal conductivity of the electrode. 2. The ESC of claim 1, wherein the metal sheet is made of metal including a silver metal sheet. 3. The ESC of claim 1, wherein a thickness of the metal sheet ranges from 10 nm to 100 nm. 4. The ESC of claim 1, wherein the top surface of the dielectric structure comprises a plurality of annular protrusions and a plurality of interposing annular depressions defined there-between, and the metal sheet is an embossed sheet having protrusions and depressions conforming to the plurality of annular protrusions and the plurality of annular depressions of the top surface of the dielectric structure. 5. The ESC of claim 4, wherein the metal sheet is arranged with substantially uniform depth from the top surface of the dielectric structure. 6. The ESC of claim 1, wherein a distance between the metal sheet and a portion of the top surface of the dielectric structure closest to the metal sheet ranges from 10 μm to 200 μm. 7. The ESC of claim 1, wherein the top surface of the dielectric structure has a plurality of annular depressions and at least one through hole formed on a projected area of at least one of the plurality of annular depressions on the metal sheet. 8. The ESC of claim 1, wherein a thermal conductivity of the metal sheet is greater than 400 W/mK. 9. The ESC of claim 1, wherein the dielectric structure is made of at least one dielectric material including aluminum oxide, aluminum nitride, silicon carbide, carbon nitride, zirconia, yttria, and magnesia; and the electrode is made of at least one metal including copper, tungsten, aluminum, nickel, chrome, platinum, tin, molybdenum, magnesium, and palladium. 10. The ESC of claim 1, further comprising: a heating plate disposed under the dielectric structure; anda bonding layer disposed between the heating plate and the dielectric structure. 11. The ESC of claim 10, wherein the bonding layer is made of at least one bonding material including a thermoplastic polyimide film (TPI), an epoxy thermal press bonding sheet, a low melting point metal, a low melting point metal alloy, and a eutectic alloy. 12. The ESC of claim 1, wherein the metal sheet is electrically floating with respect to the electrode. 13. A method of forming an electrostatic chuck (ESC), comprising: forming an electrode on a first dielectric layer;forming a second dielectric layer on the first dielectric layer, the second dielectric layer encapsulating the electrode;forming a metal sheet on the second dielectric layer;forming a third dielectric layer on the second dielectric layer, the third dielectric layer encapsulating the metal sheet; andforming a plurality of annular protrusions and a plurality of annular depressions interchanging from each other on the third dielectric layer;wherein a dielectric structure is formed by the first dielectric layer, the second dielectric layer, and the third dielectric layer and a thermal conductivity of the metal sheet is greater than a thermal conductivity of dielectric structure and a thermal conductivity of the electrode. 14. The method of claim 13, further comprising: etching the second dielectric layer to form a plurality of annular depressions;wherein an embossed surface of the metal sheet conforms to the annular depressions of the second dielectric layer and the plurality of annular depressions of a top surface of the dielectric structure is formed with respect to the embossed surface of the metal sheet. 15. The method of claim 13, wherein the metal sheet is a silver metal sheet having a thickness ranging from 10 nm to 100 nm. 16. The method of claim 13, further comprising: forming a through hole through the dielectric structure and the metal sheet to form a coolant channel 17. The method of claim 13, wherein the metal sheet is electrically floating with respect to the electrode. 18. A method of forming an electrostatic chuck (ESC), comprising: forming an electrode on a first side of an inner dielectric layer;forming a metal sheet on a second side of the inner dielectric layer; andforming an outer dielectric layer to encapsulate the electrode, the metal sheet, and the inner dielectric layer;wherein a dielectric structure is formed by the inner dielectric layer and the outer dielectric layer and a thermal conductivity of the metal sheet is greater than a thermal conductivity of dielectric structure and a thermal conductivity of the electrode. 19. The method of claim 18, wherein a surface of the outer dielectric layer has a plurality of annular depressions and an embossed surface of the metal sheet conforms to the annular depressions of the outer dielectric layer. 20. The method of claim 18, wherein the metal sheet is a silver metal sheet having a thickness ranging from 10 nm to 100 nm.
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