[미국특허]
METAL CONTAMINATION REDUCTION IN SUBSTRATE PROCESSING SYSTEMS WITH TRANSFORMER COUPLED PLASMA
원문보기
IPC분류정보
국가/구분
United States(US) Patent
공개
국제특허분류(IPC7판)
H01J-037/32
H01L-021/67
출원번호
16238926
(2019-01-03)
공개번호
20200219708
(2020-07-09)
발명자
/ 주소
LONG, Maolin
RASTGAR, Neema
PATERSON, Alexander Miller
출원인 / 주소
LONG, Maolin
인용정보
피인용 횟수 :
0인용 특허 :
0
초록▼
A substrate processing system includes a processing chamber including a substrate support to support a substrate. A coil includes at least one terminal. An RF source configured to supply RF power to the coil. A dielectric window is arranged on one surface of the processing chamber adjacent to the co
A substrate processing system includes a processing chamber including a substrate support to support a substrate. A coil includes at least one terminal. An RF source configured to supply RF power to the coil. A dielectric window is arranged on one surface of the processing chamber adjacent to the coil. A contamination reducer includes a first plate that is arranged between the at least one terminal of the coil and the dielectric window.
대표청구항▼
1. A substrate processing system, comprising: a processing chamber including a substrate support to support a substrate;a coil including at least one terminal;an RF source configured to supply RF power to the coil;a dielectric window arranged on one surface of the processing chamber adjacent to the
1. A substrate processing system, comprising: a processing chamber including a substrate support to support a substrate;a coil including at least one terminal;an RF source configured to supply RF power to the coil;a dielectric window arranged on one surface of the processing chamber adjacent to the coil; anda contamination reducer including a first plate arranged between the at least one terminal of the coil and the dielectric window. 2. The substrate processing system of claim 1, wherein the coil comprises: an inner coil including a first conductor including first terminals and a second conductor including second terminals; andan outer coil including a third conductor including third terminals and a fourth conductor including fourth terminals. 3. The substrate processing system of claim 2, further comprising a gas delivery system configured to supply gas mixtures to the processing chamber. 4. The substrate processing system of claim 3, further comprising a gas injector configured to deliver the gas mixtures to the processing chamber, wherein the gas injector is arranged in a center portion of the dielectric window. 5. The substrate processing system of claim 2, wherein: the first plate is arranged under one of the third terminals of the third conductor, one of the fourth terminals of the fourth conductor, and the first terminals of the first conductor, andthe contamination reducer further comprises a second plate arranged under another one of the third terminals of the third conductor, another one of the fourth terminals of the fourth conductor, and the second terminals of the second conductor. 6. The substrate processing system of claim 5, wherein the first plate and the second plate have a rectangular shape. 7. The substrate processing system of claim 5, wherein the first plate and the second plate have barbell shape. 8. The substrate processing system of claim 7, the first plate and the second plate include ends and a middle portion, wherein the ends have a shape selected from a group consisting of rectangular, polygonal, circular and elliptical. 9. The substrate processing system of claim 2, wherein: the first plate is arranged under one of the third terminals of the third conductor and one of the fourth terminals of the fourth conductor,the contamination reducer further comprises: a second plate arranged under the first terminals of the first conductor;a third plate arranged under the second terminals of the second conductor; anda fourth plate arranged under another one of the third terminals of the third conductor and another one of the fourth terminals of the fourth conductor. 10. The substrate processing system of claim 9, the first plate, the second plate, the third plate and the fourth plate have a shape selected from a group consisting of rectangular, polygonal, circular and elliptical. 11. The substrate processing system of claim 1, wherein the first plate is made of a material selected from a group consisting of copper and aluminum. 12. The substrate processing system of claim 1, wherein the first plate is made of silver-plated copper. 13. The substrate processing system of claim 2, wherein the inner coil and the outer coil are arranged in a range from 0.1″ to 1.0″ from the dielectric window. 14. The substrate processing system of claim 2, wherein the inner coil and the outer coil are arranged in a range from 0.1″ to 0.5″ from the dielectric window. 15. The substrate processing system of claim 2, wherein the inner coil and the outer coil are arranged at the same height above the dielectric window. 16. The substrate processing system of claim 2, wherein the inner coil and the outer coil are arranged at different heights above the dielectric window. 17. The substrate processing system of claim 1, wherein a thickness of the first plate is greater than or equal to 0.5 mm and less than or equal to 2 mm. 18. The substrate processing system of claim 1, wherein: the dielectric window includes a coating material on a plasma-facing surface thereof, andthe contamination reducer reduces contamination of the substrate by species of the coating material. 19. The substrate processing system of claim 18, wherein the coating material includes metal species and wherein the contamination reducer reduces metal contamination of the substrate.
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