The present disclosure relates to an apparatus and method for cleaning a chamber, and more particularly, to an apparatus and method for cleaning a chamber, which are capable of cleaning the chamber which is contaminated while depositing a thin film on a substrate. The chamber cleaning method in acco
The present disclosure relates to an apparatus and method for cleaning a chamber, and more particularly, to an apparatus and method for cleaning a chamber, which are capable of cleaning the chamber which is contaminated while depositing a thin film on a substrate. The chamber cleaning method in accordance with an exemplary embodiment is a method for cleaning a chamber configured to deposit a zinc oxide, the method comprising: supplying a chlorine (Cl)-containing gas and a hydrogen (H)-containing gas into a chamber; activating and reacting the separately supplied gases with each other inside the chamber to generate a reaction gas; and firstly cleaning the chamber with the reaction gas.
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1. A chamber cleaning method for cleaning a chamber for depositing a zinc oxide, the method comprising: supplying a chlorine (Cl)-containing gas and a hydrogen (H)-containing gas into the chamber;activating and reacting the separately supplied gases with each other inside the chamber to generate a r
1. A chamber cleaning method for cleaning a chamber for depositing a zinc oxide, the method comprising: supplying a chlorine (Cl)-containing gas and a hydrogen (H)-containing gas into the chamber;activating and reacting the separately supplied gases with each other inside the chamber to generate a reaction gas; andfirstly cleaning the chamber with the reaction gas. 2. The chamber cleaning method of claim 1, wherein in the supplying of the chlorine (Cl)-containing gas and the hydrogen (H)-containing gas, the chlorine (Cl)-containing gas and a hydrogen (H)-containing gas are separately supplied. 3. The chamber cleaning method of claim 1, wherein the reaction gas comprises a hydrogen chloride (HCl) gas. 4. The chamber cleaning method of claim 1, wherein in the generating of the reaction gas, the chlorine (Cl)-containing gas is activated outside a gas injection part, and the hydrogen (H)-containing gas is activated from inside the gas injection part. 5. The chamber cleaning method of claim 1, wherein in the generating of the reaction gas, the chlorine (Cl)-containing gas and the hydrogen (H)-containing gas are activated in activation regions having mutually different sizes. 6. The chamber cleaning method of claim 1, wherein in the generating of the reaction gas, the chlorine (Cl)-containing gas and the hydrogen (H)-containing gas which are activated inside the chamber are reacted outside the gas injection part. 7. The chamber cleaning method of claim 1, further comprising: secondly cleaning the chamber with an activated hydrogen (H)-containing cleaning gas; andthirdly cleaning the chamber with an activated oxygen (O)-containing cleaning gas. 8. The chamber cleaning method of claim 7, wherein the secondly cleaning comprises removing a chlorine (Cl) component remaining inside the chamber, andthe thirdly cleaning comprises removing a hydrogen (H) component remaining inside the chamber. 9. The chamber cleaning method of claim 8, wherein the removing of the chlorine (Cl) component is performed by activating the hydrogen (H)-containing cleaning gas inside the chamber, andthe removing of the hydrogen (H) component is performed by activating the oxygen (O)-containing cleaning gas inside the chamber. 10. The chamber cleaning method of claim 8, wherein the hydrogen (H)-containing cleaning gas is supplied into the chamber through a same path as the hydrogen (H)-containing gas. 11. The chamber cleaning method of claim 7, wherein the firstly cleaning, the secondly cleaning, and the thirdly cleaning are performed at a temperature of approximately 150-350° C. 12. A chamber cleaning apparatus comprising: a first gas supply part configured to supply a first gas;a second gas supply part configured to supply a second gas;a gas injection part installed inside a chamber and comprising a first gas supply path for supplying the first gas and a second gas supply path for supplying the second gas, the first gas supply path and the second gas supply path being separately formed;a power supply part connected to the gas injection part and configured to apply power to the gas injection part; anda control unit configured to control the gas injection part and the power supply part so as to generate a reaction gas for etching a byproduct inside the chamber by activating the first gas and the second gas and reacting the first gas and the second gas with each other. 13. The chamber cleaning apparatus of claim 12, wherein the gas injection part comprises: an upper frame installed inside the chamber; anda lower frame installed to be spaced apart downward from the upper frame,wherein a heating means is installed inside at least one of the upper frame or the lower frame. 14. The chamber cleaning apparatus of claim 13, wherein the heating means is installed on at least one of the upper frame or the lower frame so as to be split in plurality. 15. The chamber cleaning apparatus of claim 13, wherein a cooling means is installed inside at least one of the upper frame or the lower frame. 16. The chamber cleaning apparatus of claim 12, wherein the gas injection part comprises:a plurality of first electrodes provided to be arranged along an injection surface; andsecond electrodes provided on the periphery of the first electrodes so as to be spaced apart from the first electrodes, andthe power supply part applies power to at least one of the first electrode or the second electrode. 17. The chamber cleaning apparatus of claim 16, wherein the first gas supply path is provided to pass through the first electrodes, andthe second gas supply path is provided so as to be connected to separation spaces between the first electrodes and the second electrodes. 18. The chamber cleaning apparatus of claim 12, wherein the control unit controls supply amounts of the first gas and the second gas according to types of the first gas, the second gas, and the reaction gas. 19. The chamber cleaning apparatus of claim 12, further comprising an oxygen (O)-containing gas supply part configured to supply an oxygen (O)-containing gas, wherein the gas injection part supplies the oxygen (O)-containing gas into the chamber through at least one of the first gas supply path or the second gas supply path.
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