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Method of forming silicon dioxide 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/18
출원번호 US-0568215 (1975-04-14)
발명자 / 주소
  • Lim Mahn-Jick (Lower Makefield Township
  • Bucks County PA)
출원인 / 주소
  • Western Electric Company, Inc. (New York NY 02)
인용정보 피인용 횟수 : 46  인용 특허 : 0

초록

A method of depositing a layer comprising SiO2 on a surface of a substrate at a rate which is temperature independent is disclosed. The method includes combining dichlorosilane (SiH2Cl2) with an oxidizing gas, such as O2, CO2, N2O, H2O, to form SiO2.

대표청구항

A method of depositing a glass layer comprising SiO2 on a surface of a substrate which comprises initially combining gaseous SiH2Cl2 with an oxidizing gas, selected from the group consisting of O2, CO2, N2O, H2O and mixtures thereof in a liquid phase free ambient at a temperature ranging from about

이 특허를 인용한 특허 (46)

  1. Temkin, Henryk; Kazarinov, Rudolf Feodor, Birefringence free optical waveguide structures.
  2. Jonathan Frankel ; Visweswaren Sivaramakrishnan, Chamber liner for high temperature processing chamber.
  3. Faur, Maria; Faur, Horia M.; Faur, Mircea, Compositions to facilitate room temperature growth of an oxide layer on a substrate.
  4. Kobrin, Boris; Nowak, Romuald; Yi, Richard C.; Chinn, Jeffrey D., Controlled deposition of silicon-containing coatings adhered by an oxide layer.
  5. Kobrin, Boris; Nowak, Romuald; Yi, Richard C.; Chinn, Jeffrey D., Controlled deposition of silicon-containing coatings adhered by an oxide layer.
  6. Kobrin, Boris; Chinn, Jeffrey D.; Nowak, Romuald; Yi, Richard C., Controlled vapor deposition of multilayered coatings adhered by an oxide layer.
  7. Kobrin, Boris; Chinn, Jeffrey D.; Nowak, Romuald; Yi, Richard C., Controlled vapor deposition of multilayered coatings adhered by an oxide layer.
  8. Adams Arthur C. (Berkeley Heights NJ), Deposition of doped silicon oxide films.
  9. Lorenzo Joseph P. (Stow MA) Soref Richard A. (Newton Centre MA), Electro-optical silicon devices.
  10. Claude L. Davis, Jr. ; Kenneth E. Hrdina ; Robert Sabia ; Harrie J. Stevens, Extreme ultraviolet soft x-ray projection lithographic method and mask devices.
  11. Davis, Jr., Claude L.; Hrdina, Kenneth E.; Sabia, Robert; Stevens, Harrie J., Extreme ultraviolet soft x-ray projection lithographic method and mask devices.
  12. Davis Jr., Claude L.; Hrdina, Kenneth E., Extreme ultraviolet soft x-ray projection lithographic method system and lithographic elements.
  13. Davis, Jr., Claude L.; Hrdina, Kenneth E., Extreme ultraviolet soft x-ray projection lithographic method system and lithographic elements.
  14. Heath ; Carl E. ; Grafstein ; Daniel ; Milewski ; John V., Forming a glass on a substrate.
  15. Frankel, Jonathan; Ponnekanti, Hari; Shmurun, Inna; Sivaramakrishnan, Visweswaren, Heater/lift assembly for high temperature processing chamber.
  16. Kobrin, Boris; Chinn, Jeffrey D.; Nowak, Romuald; Yi, Richard C., High aspect ratio performance coatings for biological microfluidics.
  17. Pretterebner, Julius; Auner, Norbert, Hydrogen and energy generation by thermal conversion of silanes.
  18. Bang Won ; Yieh Ellie ; Pham Thanh, Lid assembly for a process chamber employing asymmetric flow geometries.
  19. Frankel Jonathan ; Shmurun Inna ; Sivaramakrishnan Visweswaren ; Fukshansky Eugene, Lid assembly for high temperature processing chamber.
  20. Kemlage Bernard M. (Kingston NY), Low pressure chemical vapor deposition of silicon dioxide with oxygen enhancement of the chlorosilane-nitrous oxide reac.
  21. Peters John W. (Malibu CA), Low temperature process for depositing oxide layers by photochemical vapor deposition.
  22. Lorenzo Joseph P. (Stow MA) Soref Richard A. (Newton Centre MA), Method for fabricating low loss crystalline silicon waveguides by dielectric implantation.
  23. Kuisl Max (Ulm DEX), Method for producing a preform for light waveguides.
  24. Danzuka Toshio (Yokohama JPX) Yokota Hiroshi (Yokohama JPX) Ishiguro Yoichi (Yokohama JPX), Method for producing glass preform for optical fiber.
  25. Wang David Nin-Kou ; White John M. ; Law Kam S. ; Leung Cissy ; Umotoy Salvador P. ; Collins Kenneth S. ; Adamik John A. ; Perlov Ilya ; Maydan Dan, Method for protecting against deposition on a selected region of a substrate.
  26. Atkins Robert Michael ; Windeler Robert Scott, Method of making optical waveguide devices using perchloryl fluoride to make soot.
  27. Blaske Theodore A. (Plano TX) Yu Ho Y. (Richardson TX), Method of passivating a semiconductor device utilizing dual polycrystalline layers.
  28. Best, Michael E.; Davis, Jr., Claude L.; Edwards, Mary J.; Hobbs, Thomas W.; Murray, Gregory L., Method to avoid striae in EUV lithography mirrors.
  29. Patrick A. Van Cleemput ; Ravi Kumar Laxman ; Jen Shu ; Michelle T. Schulberg ; Bunsen Nie, Method to deposit SiOCH films with dielectric constant below 3.0.
  30. Yieh Ellie ; Xia Li-Qun ; Nemani Srinivas, Methods for shallow trench isolation.
  31. Freeman Dean W. (Garland TX), Oxide deposition method.
  32. Hall James T. (Redondo Beach CA) Peters John W. (Malibu CA), Photochemical vapor deposition process for depositing oxide layers.
  33. Kemlage Bernard M. (Kingston NY), Prevention of low pressure chemical vapor deposition silicon dioxide undercutting and flaking.
  34. Villermet Alain,FRX ; Coeuret Fran.cedilla.ois,FRX ; Cocolios Panayotis,FRX ; Inizan Michel,FRX, Process and plant for the production of a gaseous mixture containing a carrier gas an oxidizing gas and a silane.
  35. Sandhu, Gurtej Singh; Thakur, Randhir P S, Process for growing a dielectric layer on a silicon-containing surface using a mixture of NO and O.
  36. Sandhu,Gurtej Singh; Thakur,Randhir P S, Process for growing a dielectric layer on a silicon-containing surface using a mixture of NO and O.
  37. Takagi Mikio (Kawasaki JPX) Maeda Mamoru (Kawasaki JPX) Kamioka Hajime (Yokohama JPX), Process for high pressure oxidation of silicon.
  38. Takagi Mikio (Kawasaki JPX) Maeda Mamoru (Kawasaki JPX) Kamioka Hajime (Yokohama JPX), Process for high pressure oxidation of silicon.
  39. Takagi Mikio (Kawasaki JPX) Maeda Mamoru (Tama JPX) Kamioka Hajime (Yokohama JPX), Process for high pressure oxidation of silicon.
  40. Shimokawa Kimiaki (Tokyo JPX) Hoga Hiroshi (Tokyo JPX), Process for manufacturing a semiconductor device having a contact window defined by an inclined surface of a composite f.
  41. Re Danilo,ITX, Process for manufacturing integrated capacitors in MOS technology.
  42. Schneider Hartmut (Munich DEX) Lebetzki Egon (Munich DEX), Process for the production of glass fiber light conductors.
  43. Frankel Jonathan, Systems and methods for controlling the temperature of a vapor deposition apparatus.
  44. Sivaramakrishnan Visweswaren ; Fong Gary, Systems and methods for detecting end of chamber clean in a thermal (non-plasma) process.
  45. Junro Sakai JP, Thin film deposition apparatus.
  46. Chang Ching T. (San Diego CA), Triple minimum dispersion wavelengths for a high NA single-mode step-index fiber.
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