초록 ▼

A vertical insulated gate field effect transistor having a first conductivity layer, a second conductivity layer thereon, a third first conductivity layer thereon, a groove extending from the surface of the third layer through the second layer into the first layer, a layer of insulation and gate mat

A vertical insulated gate field effect transistor having a first conductivity layer, a second conductivity layer thereon, a third first conductivity layer thereon, a groove extending from the surface of the third layer through the second layer into the first layer, a layer of insulation and gate material in the groove and a shallow first conductivity vertical region extending from the third layer into the second layer along the groove to form a short channel in the second layer with a shallow device junction. The device is fabricated by masking the three semiconductor layers and etching the third layer and part of the second layer to form a groove, diffusing second conductivity impurities to a shallow depth in the groove, continuing the etching to extend the groove through the second layer into the first layer. A layer of insulation and gate material are formed in the groove to produce the vertical channel.

대표청구항 ▼

In a vertical insulated gate field effect transistor having a first layer of a first conductivity type, a second layer of a second conductivity type on said first layer, a horizontal surface region in said seconod layer of said first conductivity type, a groove extending from said horizontal surface

In a vertical insulated gate field effect transistor having a first layer of a first conductivity type, a second layer of a second conductivity type on said first layer, a horizontal surface region in said seconod layer of said first conductivity type, a groove extending from said horizontal surface region through said second layer and into said first layer, a layer of insulation in said groove and a gate material in said groove and on said layer of insulation, the portion of said second region adjacent said gate material being a vertical channel between said first layer and said horizontal surface region, the improvement comprising a vertical surface region in the lateral surface of said second layer adjacent said gate, contiguous to said horizontal surface region and terminating vertically within said second layer, said vertical channel being between the end of said vertical surface region and said first layer.