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Tunable cut-off UV detector based on the aluminum gallium nitride material system 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-027/14
  • H01L-031/00
출원번호 US-0658961 (1984-10-09)
발명자 / 주소
  • Khan M. Asif (Burnsville MN) Schulze Richard G. (Hopkins MN) Skogman Richard A. (Plymouth MN)
출원인 / 주소
  • Honeywell Inc. (Minneapolis MN 02)
인용정보 피인용 횟수 : 56  인용 특허 : 2

초록

A method of preparing a UV detector of AlxGa1-xN. Metal organic chemical vapor deposition (MOCVD) is utilized to grow AlN and then AlxGa1-xN on a sapphire substrate. A photodetector structure is fabricated on the AlGaN.

대표청구항 ▼

In a solid state UV detector comprising: a. a basal plane sapphire (Al2O3) substrate; b. an epitaxial single-crystalline aluminum nitride (AlN) layer grown on the surface of the substrate; c. An epitaxial single-crystalline aluminum gallium nitride (AlxGa1-xN) layer grown over said AlN layer; and, d

이 특허에 인용된 특허 (2)

  1. Rutz ; Richard Frederick, Fabrication of an epitaxial layer diode in aluminum nitride on sapphire.
    상세보기
  2. Howard James K. (Fishkill NY) White James F. (Newburgh NY), Gold-tantalum-titanium/tungsten alloy contact for semiconductor devices and having a gold/tantalum intermetallic barrier.
    상세보기

이 특허를 인용한 특허 (56)

  1. Khan, Muhammad A.; VanHove, James M.; Olson, Donald T., Aluminum gallium nitride laser.
    상세보기
  2. Wei X. Yang ; Thomas E. Nohava ; Scott A. McPherson ; Robert C. Torreano ; Subash Krishnankutty ; Holly A. Marsh, Back-illuminated heterojunction photodiode.
    상세보기
  3. Cole, Barrett E.; Marta, Terry, Beam intensity detection in a cavity ring down sensor.
    상세보기
  4. Cole, Barrett E., CRDS mirror for normal incidence fiber optic coupling.
    상세보기
  5. Cole, Barrett E., Cavity enhanced photo acoustic gas sensor.
    상세보기
  6. Cole, Barrett E., Cavity ring-down spectrometer having mirror isolation.
    상세보기
  7. Cox, James Allen; Cole, Barrett E., Compact gas sensor using high reflectance terahertz mirror and related system and method.
    상세보기
  8. Fritz, Bernard, Enhanced cavity for a photoacoustic gas sensor.
    상세보기
  9. Matsuoka Takashi (Ibaragi JPX) Sasaki Toru (Ibaragi JPX), Epitaxial Wurtzite growth structure for semiconductor light-emitting device.
    상세보기
  10. Li,Jing; Fan,Zhaoyang; Lin,Jingyu; Jiang,Hongxing, Extreme ultraviolet (EUV) detectors based upon aluminum nitride (ALN) wide bandgap semiconductors.
    상세보기
  11. Machuca,Francisco; Liu,Zhi, Fabrication of group III-nitride photocathode having Cs activation layer.
    상세보기
  12. Katsuhide Manabe JP; Akira Mabuchi JP; Hisaki Kato JP; Michinari Sassa JP; Norikatsu Koide JP; Shiro Yamazaki JP; Masafumi Hashimoto JP; Isamu Akasaki JP, Gallium nitride group compound semiconductor.
    상세보기
  13. Yang Wei ; Nohava Thomas E. ; McPherson Scott A. ; Torreano Robert C. ; Marsh Holly A. ; Krishnankutty Subash, High gain GaN/AlGaN heterojunction phototransistor.
    상세보기
  14. Barany Barbara G. (Falcon Heights MN) Reimer Scott T. (Fagan MN) Ulmer Robert P. (Hopkins MN) Zook J. David (Minneapolis MN), High gain ultraviolet photoconductor based on wide bandgap nitrides.
    상세보기
  15. Cox, James Allen; Higashi, Robert, High reflectance terahertz mirror and related method.
    상세보기
  16. Major Jo S. (San Jose CA) Welch David F. (Menlo Park CA) Scifres Donald R. (San Jose CA), III-V aresenide-nitride semiconductor materials and devices.
    상세보기
  17. Major Jo S. ; Welch David F. ; Scifres Donald R., III-V arsenide-nitride semiconductor.
    상세보기
  18. Flynn,Jeffrey S.; Xin,Huoping; Brandes,George R., III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier.
    상세보기
  19. Higashi, Robert E.; Newstrom-Peitso, Karen M.; Ridley, Jeffrey A., Integral topside vacuum package.
    상세보기
  20. Katsuhide Manabe JP; Akira Mabuchi JP; Hisaki Kato JP; Michinari Sassa JP; Norikatsu Koide JP; Shiro Yamazaki JP; Masafumi Hashimoto JP; Isamu Akasaki JP, Light emitting device.
    상세보기
  21. Manabe Katsuhide,JPX ; Mabuchi Akira,JPX ; Kato Hisaki,JPX ; Sassa Michinari,JPX ; Koide Norikatsu,JPX ; Yamazaki Shiro,JPX ; Hashimoto Masafumi,JPX ; Akasaki Isamu,JPX, Light emitting semiconductor device using gallium nitride group compound.
    상세보기
  22. Manabe Katsuhide,JPX ; Kotaki Masahiro,JPX ; Tamaki Makoto,JPX ; Hashimoto Masafumi,JPX, Light-emitting device of gallium nitride compound semiconductor.
    상세보기
  23. Katsuhide Manabe JP; Akira Mabuchi JP; Hisaki Kato JP; Michinari Sassa JP; Norikatsu Koide JP; Shiro Yamazaki JP; Masafumi Hashimoto JP; Isamu Akasaki JP, Light-emitting semiconductor device using gallium nitride group compound.
    상세보기
  24. Manabe, Katsuhide; Mabuchi, Akira; Kato, Hisaki; Sassa, Michinari; Koide, Norikatsu; Yamazaki, Shiro; Hashimoto, Masafumi; Akasaki, Isamu, Light-emitting semiconductor device using gallium nitride group compound.
    상세보기
  25. Manabe, Katsuhide; Mabuchi, Akira; Kato, Hisaki; Sassa, Michinari; Koide, Norikatsu; Yamazaki, Shiro; Hashimoto, Masafumi; Akasaki, Isamu, Method for manufacturing a gallium nitride group compound semiconductor.
    상세보기
  26. Manabe,Katsuhide; Mabuchi,Akira; Kato,Hisaki; Sassa,Michinari; Koide,Norikatsu; Yamazaki,Shiro; Hashimoto,Masafumi; Akasaki,Isamu, Method for manufacturing a gallium nitride group compound semiconductor.
    상세보기
  27. Manabe, Katsuhide; Mabuchi, Akira; Kato, Hisaki; Sassa, Michinari; Koide, Norikatsu; Yamazaki, Shiro; Hasimoto, Masafumi; Akasaki, Isamu, Method for producing a light-emitting semiconductor device.
    상세보기
  28. Wang, Tao, Method for significant reduction of dislocations for a very high A1 composition A1GaN layer.
    상세보기
  29. Moustakas, Theodore D., Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen.
    상세보기
  30. Barber, Greg D.; Kurtz, Sarah R., Method of preparing nitrogen containing semiconductor material.
    상세보기
  31. Kraus, Philip A.; Nijhawan, Sandeep; Chua, Thai Cheng, Methods and systems for forming thin films.
    상세보기
  32. Major Jo S. ; Welch David F. ; Scifres Donald R., Methods for forming group III-V arsenide-nitride semiconductor materials.
    상세보기
  33. Jo S. Major ; David F. Welch ; Donald R. Scifres, Methods for forming group III-arsenide-nitride semiconductor materials.
    상세보기
  34. Butcher, Kenneth Scott Alexander, Migration and plasma enhanced chemical vapor deposition.
    상세보기
  35. Butcher, Kenneth Scott Alexander, Migration and plasma enhanced chemical vapor deposition.
    상세보기
  36. Cole,Barrett E.; Higashi,Robert E.; Zins,Christopher J.; Krishnankutty,Subash, Multi-substrate package assembly.
    상세보기
  37. Cole,Barrett E.; Higashi,Robert E.; Zins,Christopher J.; Krishnankutty,Subash, Multi-substrate package assembly.
    상세보기
  38. Cole, Barrett E.; Marta, Terry; Cox, James Allen; Nusseibeh, Fouad, Multiple wavelength cavity ring down gas sensor.
    상세보기
  39. Cole,Barrett E., Multiple wavelength spectrometer.
    상세보기
  40. Takeuchi, Tetsuya; Kaneko, Yawara; Yamada, Norihide; Amano, Hiroshi; Akasaki, Isamu, Nitride semiconductor device.
    상세보기
  41. Cole, Barrett E.; Cox, James A.; Zook, J. David, Optical cavity system having an orthogonal input.
    상세보기
  42. La Forgia, Domenico; De Risi, Arturo Antonio; De Vittorio, Massimo; Cingolani, Roberto; Passaseo, Adriana; Lomascolo, Mauro, Optical system for detecting the concentration of combustion products.
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  43. Cole, Barrett E.; Gu, Yuandong, Particle detection using fluorescence.
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  44. Moustakas Theodore D. (Dover MA) Misra Mira (Arlington MA), Photodetectors using III-V nitrides.
    상세보기
  45. Goldenberg Barany Barbara ; McPherson Scott A. ; Reimer Scott T. ; Ulmer Robert P. ; Zook J. David ; Hitchell ; deceased Maurice L., Process for forming a high gain, wide bandgap gallium nitride photoconductor having particular sensitivity to ultraviol.
    상세보기
  46. Akasaki Isamu (Nagoya JPX) Sawaki Nobuhiko (Nagoya JPX), Process for growing III-V compound semiconductors on sapphire using a buffer layer.
    상세보기
  47. Reilly David M. (Boxborough MA) Nicoli Anthony M. (Brighton MA) Schulze Richard G. (Hopkins MN) Goldenberg Barbara L. (Minneapolis MN), Pulsed optical source.
    상세보기
  48. Moustakas, Theodore D., Semiconductor device having group III nitride buffer layer and growth layers.
    상세보기
  49. Moustakas,Theodore D., Semiconductor device having group III nitride buffer layer and growth layers.
    상세보기
  50. Tadatomo, Kazuyuki; Okagawa, Hiroaki; Ohuchi, Youichiro; Koto, Masahiro; Hiramatsu, Kazumasa; Hamamura, Yutaka; Shimizu, Sumito, Semiconductor light receiving element.
    상세보기
  51. Cole,Barrett E.; Higashi,Robert E.; Subramanian,Arunkumar; Krishnankutty,Subash, Spectrally tunable detector.
    상세보기
  52. Cole,Barrett E.; Higashi,Robert E.; Subramanian,Arunkumar; Krishnankutty,Subash, Spectrally tunable detector.
    상세보기
  53. Munns,Gordon, Super lattice modification of overlying transistor.
    상세보기
  54. Rowney Kevin T. B., System, method and article of manufacture for conditionally accepting a payment method utilizing an extensible, flexible.
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  55. Cox,James A.; Cole,Barrett E., Tunable laser fluid sensor.
    상세보기
  56. Lin,Cha Hsin; Lee,Lurng Shehng, Ultraviolet detector.
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