초록 ▼

Disclosed are detector devices and related methods. In an AlN EUV detector a low temperature AlN layer is deposed above an AlN buffer layer. In one embodiment, the low temperature AlN layer is deposed at about 800�� C. Pulsed NH3 is used when growing an AlN epilayer above the low temperature layer.

Disclosed are detector devices and related methods. In an AlN EUV detector a low temperature AlN layer is deposed above an AlN buffer layer. In one embodiment, the low temperature AlN layer is deposed at about 800�� C. Pulsed NH3 is used when growing an AlN epilayer above the low temperature layer. Numerous embodiments are disclosed.

대표청구항 ▼

The invention claimed is: 1. A method of making a detector device comprising: providing a substrate; depositing an AlN buffer layer above said substrate; depositing an intermediate AlN epilayer above said buffer layer; and depositing an active AlN epilayer above said intermediate AlN layer, said Al

The invention claimed is: 1. A method of making a detector device comprising: providing a substrate; depositing an AlN buffer layer above said substrate; depositing an intermediate AlN epilayer above said buffer layer; and depositing an active AlN epilayer above said intermediate AlN layer, said AlN buffer layer being deposited at a lower temperature than said intermediate AlN epilayer; said intermediate AlN epilayer being deposited at a lower temperature than said active AlN epilayer. 2. The method of claim 1 wherein said depositing of said intermediate AlN layer is executed at a temperature of approximately 800�� C. 3. The method of claim 1 comprising: using pulsed NH3 during said depositing said AlN epilayer step. 4. A detector device comprising: a substrate; an AlN buffer layer above said substrate; an i-AlN epilayer template disclocation filter layer located above said buffer layer; an AlN active layer above said disclocation filter layer; and at least one contacts arranged across said active layer; said detector device having a cut-off wavelength of about 200 nm. 5. A semiconductor ultraviolet detector, said detector comprising: a substrate; a plurality of successive layers of AlN; and said detector having a cut-off wavelength of about 200 nm. 6. A method of making a detector device comprising: providing a substrate; depositing an AlN buffer layer above said substrate; depositing an intermediate AlN epilayer above said buffer layer using pulsed NH3; and depositing an active AlN epilayer above said intermediate AlN layer.