초록 ▼

A process for manufacturing a high voltage DMOS (Deep Diffusion Metal Oxide Semiconductor) transistor includes a first ion implantation and drive-in step to form a P-well in a N-substrate, and a second such step to form a N+region in this well and a channel between this region and the substrate and

A process for manufacturing a high voltage DMOS (Deep Diffusion Metal Oxide Semiconductor) transistor includes a first ion implantation and drive-in step to form a P-well in a N-substrate, and a second such step to form a N+region in this well and a channel between this region and the substrate and under a polysilicon gate which is covered with a silicon nitride layer during the first step. By the presence of the latter layer pitting of the gate is prevented and no leakage paths are formed between source and drain.

대표청구항 ▼

A process for making a semiconductor device comprising the steps of: providing a substrate of a first conductivity type; covering said substrate with an oxide layer; forming a polysilicon gate on said oxide layer; forming an opening in said oxide layer; subjecting said substrate to a first predeposi

A process for making a semiconductor device comprising the steps of: providing a substrate of a first conductivity type; covering said substrate with an oxide layer; forming a polysilicon gate on said oxide layer; forming an opening in said oxide layer; subjecting said substrate to a first predeposition of impurity material of a second conductivity type through said opening; subjecting said substrate to a first diffusion drive-in operation to form a well of said second conductivity type therein through said opening; subjecting said substrate to a second predeposition and second diffusion drive-in steps of impurity material to form a region in said well through said opening separated from the boundary of said well by a channel zone, said channel zone being formed under said polysilicon gate; covering said polysilicon gate by a silicon nitride layer during at least said first drive-in step; and wherein said region forms the source of said device and said substrate forms the drain of said device.