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A semiconductor device used for, particularly, an output stage of a logic circuit is formed by a Schottky.barrier.diode clamping transistor. A clamping circuit is provided between a collector and a base for clamping a collector potential. The clamping circuit is formed by a Schottky.barrier.diode (S

A semiconductor device used for, particularly, an output stage of a logic circuit is formed by a Schottky.barrier.diode clamping transistor. A clamping circuit is provided between a collector and a base for clamping a collector potential. The clamping circuit is formed by a Schottky.barrier.diode (SBD) and a series connected resistance coupled to the Schottky.barrier.diode. A collector resistance is divided by resistance division using the series resistance (FIG. 6).

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A semiconductor device used for a logic circuit including a Schottky.barrier.diode clamping transistor, comprising: a buried layer of a first conductivity type having a first impurity concentration; a collector layer of the first conductivity type on said buried layer, said collector layer having a

A semiconductor device used for a logic circuit including a Schottky.barrier.diode clamping transistor, comprising: a buried layer of a first conductivity type having a first impurity concentration; a collector layer of the first conductivity type on said buried layer, said collector layer having a second impurity concentration which is lower than the first impurity concentration, said collector layer further having a doped contact region of a third impurity concentration higher than the second impurity concentration, said doped contact region being formed between said buried layer and the surface of said collector layer; a base region of a second conductivity type which is opposite to the first conductivity type, said base region being formed at the surface of said collector layer; an emitter region of the first conductivity type formed in the base region; an emitter electrode formed on said emitter region; a base electrode formed on said base region; a collector electrode formed on said doped contact region of said collector layer; and a Schottky contact formed on a portion of said collector layer having the second impurity concentration, said Schottky contact being coupled to said base electrode, a third resistance extending from said Schottky contact through said collector layer, a first resistance extending from said collector contact through said doped contact region to a point in said buried layer, and a second resistance extending from a PN junction between said base region and said collector layer under said emitter region through the collector layer to the point in said buried layer, said first resistance being smaller than said second resistance.