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Electrolytic method for the etch back of encapsulated copper-Invar-copper core structures 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C25F-003/02
출원번호 US-0651073 (1991-02-06)
발명자 / 주소
  • Duke Peter J. (Endwell NY) Semkow Krystyna W. (Johnson City NY)
출원인 / 주소
  • International Business Machines Corp. (Armonk NY 02)
인용정보 피인용 횟수 : 32  인용 특허 : 0

초록

Disclosed is a method of fabricating a microelectronic package having least one layer formed of a copper-Invar-copper core encapsulated between a pair of dielectric films. The method includes exposing a copper-Invar-copper surface of the copper-Invar-copper core, for example, exposing an edge of the

대표청구항

A method of fabricating a multi-layer electronic circuit package, said package comprising at least one layer having a copper-Fe/Ni alloy-copper laminate core between dielectric films, and a plated through hole extending through said layer and electrically insulated from said copper-Fe/Ni alloy-coppe

이 특허를 인용한 특허 (32)

  1. Datta Madhav (Yorktown Heights NY) O\Toole Terrence R. (Webster NY), Electrochemical metal removal technique for planarization of surfaces.
  2. Zhai,Jun; Kwon,Jinsu; Blish, II,Richard C., Integrated circuit package and method.
  3. Braun, David J.; Guenther, Charles J.; Hagan, James A.; Hoffmeyer, Mark K.; Keidl, Steven D.; Daun-Lindberg, Timothy C.; Stephanie, John G.; Ting, Vincent W., Metal substrate double sided circuit board.
  4. Lee,Whonchee; Meikle,Scott G., Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates.
  5. Lee,Whonchee; Meikle,Scott G.; Blalock,Guy, Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate.
  6. Chopra, Dinesh, Method and apparatus for simultaneously removing multiple conductive materials from microelectronic substrates.
  7. Lee, Whonchee; Meikle, Scott G.; Blalock, Guy T., Method for forming a microelectronic structure having a conductive material and a fill material with a hardness of 0.04 GPA or higher within an aperture.
  8. Lee, Whonchee; Meikle, Scott G.; Blalock, Guy T., Method for removing metal layers formed outside an aperture of a BPSG layer utilizing multiple etching processes including electrochemical-mechanical polishing.
  9. Lee, Whonchee; Moore, Scott E.; Meikle, Scott G., Method for selectively removing conductive material from a microelectronic substrate.
  10. Chopra,Dinesh, Method for simultaneously removing multiple conductive materials from microelectronic substrates.
  11. Lee, Whonchee; Meikle, Scott G.; Moore, Scott E.; Doan, Trung T., Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate.
  12. Lee,Whonchee; Meikle,Scott G.; Moore,Scott E.; Doan,Trung T., Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate.
  13. Lee,Whonchee; Meikle,Scott G.; Moore,Scott E., Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate.
  14. Lee, Whonchee; Moore, Scott E.; Meikle, Scott G., Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium.
  15. Lee,Whonchee; Moore,Scott E.; Meikle,Scott G., Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium.
  16. Moore,Scott E.; Lee,Whonchee; Meikle,Scott G.; Doan,Trung T., Methods and apparatus for electrochemical-mechanical processing of microelectronic workpieces.
  17. Lee, Whonchee; Moore, Scott E.; Meikle, Scott G., Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate.
  18. Lee, Whonchee; Moore, Scott E.; Meikle, Scott G., Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate.
  19. Lee,Whonchee; Moore,Scott E.; Meikle,Scott G., Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate.
  20. Lee, Whonchee; Moore, Scott E.; Vaartstra, Brian A., Methods and apparatus for removing conductive material from a microelectronic substrate.
  21. Lee,Whonchee; Moore,Scott E.; Vaartstra,Brian A., Methods and apparatus for removing conductive material from a microelectronic substrate.
  22. Moore,Scott E., Methods and apparatus for removing conductive material from a microelectronic substrate.
  23. Lee, Whonchee; Moore, Scott E.; Meikle, Scott G., Methods and apparatus for selectively removing conductive material from a microelectronic substrate.
  24. Lee,Whonchee; Moore,Scott E.; Meikle,Scott G., Methods and apparatus for selectively removing conductive material from a microelectronic substrate.
  25. Lee, Whonchee, Methods and apparatuses for electrochemical-mechanical polishing.
  26. Lee, Whonchee, Methods and apparatuses for electrochemical-mechanical polishing.
  27. Lee,Whonchee, Methods and apparatuses for electrochemical-mechanical polishing.
  28. Lee, Whonchee; Sabde, Gundu M., Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media.
  29. Lee, Whonchee; Sabde, Gundu M., Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media.
  30. Lee,Whonchee; Meikle,Scott G.; Moore,Scott E., Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material.
  31. Wang, Alan E.; Olson, Kevin C.; Pawlik, Michael J., Process of fabricating a circuit board.
  32. Avanzino,Steven C., Solutions for controlled, selective etching of copper.
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