[특허]Stationary aperture plate for reactive sputter deposition

Stationary aperture plate for reactive sputter deposition 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C23C-014/34
출원번호	US-0095950 (1993-07-22)
발명자 / 주소	Hurwitt Steven D. (Park Ridge NJ) Wagner Israel (Monsey NY)
출원인 / 주소	Materials Research Corporation (Orangeburg NY 02)
인용정보	피인용 횟수 : 86 인용 특허 : 0

초록 ▼

The aperture plate of the present invention is positioned between a sputter target and a substrate to be coated with a film of target material. The substantially non-collimating plate contains a plurality of apertures which intercept a percentage of the sputter particles while allowing other sputter particles to be deposited upon the substrate to form the film. The rate of deposition achieved by the aperture plate is less than the rate of sputtering so that the target may be sputtered at a sufficiently higher rate to reduce the formation of a reactant film on the sputter target while the deposition rate is sufficiently low to allow adequate reaction between a reactive gas and sputter particles to form the desired reactant film on the substrate. In accordance with another aspect of the invention, the apertures of the plate have different aspect ratios or different densities in various different regions of the plate to achieve various different deposition rates in different areas of the substrate. The aspect ratios of the apertures may be selectively varied to achieve a more uniform film thickness or a film of selectively varied thicknesses. The various aspect ratios are achieved by selectively varying a cross-sectional area and/or depth of the apertures in the plate.

대표청구항 ▼

A reactive sputter deposition apparatus for reactively depositing a uniform film and reducing the formation of a reactive film layer on the surface of the sputter target including an evacuatable chamber, the apparatus further comprising: a mount for holding a sputter target within the evacuatable chamber; an electrical system for electrically biasing the sputter target; a gas introduction system for introducing an ionizable gas into the chamber proximate to the sputter target; an ionizing system for ionizing the gas into a plasma containing ionized particles having an electrical charge opposite in polarity to the biased sputter target so that the ionized particles are attracted away from the plasma to bombard the target and sputter particles from the target at a first rate; a substrate mount for holding a substrate generally opposite the sputter target so that sputtered particles deposit upon a surface of the substrate to form a film; a reactive gas introduction system for introducing a reactive gas proximate to the substrate surface to chemically react with the sputter particles which deposit upon the substrate surface and thereby form a reaction product film on the substrate surface; an aperture plate situated between the target and the substrate, the plate having a plurality of apertures with low aspect ratios in the range of 0.05 to 0.5 formed therein so as to be substantially non-collimating, the apertures having associated cross-sectional areas and depth dimensions and configured to intercept a percentage of the sputter particles and to allow other particles to pass through the plate and deposit on the substrate at a second rate which is lower than the first rate by an amount sufficient to allow the reactive deposition reaction to occur at the substrate but not lower by more than approximately 75%, the plate being spaced from said substrate to virtually eliminate any sharp delineation of the aperture pattern onto the substrate surface, the first and second rates being maintained by the plate such that the target is sputtered away at a rate sufficiently high to reduce the formation of a reactive layer on the target, but the deposited particles are deposited upon the substrate at a rate sufficiently low to achieve a desired reaction between the sputter particles and the reactive gas at the substrate surface; and the plate having various regions, and the apertures in one region having aspect ratios different than aspect ratios of apertures in another region to vary the deposition rates between the regions relative to a non-uniform sputtering rate and produce a more uniformly deposited film on the substrate; whereby a desired uniform film is formed on the substrate while the formation of an undesired reactant film on the target is reduced.

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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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연합인증

Stationary aperture plate for reactive sputter deposition 원문보기

초록 ▼

대표청구항 ▼

연구과제 타임라인

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Stationary aperture plate for reactive sputter deposition 원문보기

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연구과제 타임라인

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