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A process for forming a titanium silicide local interconnect between electrodes separated by a dielectric insulator on an integrated circuit. A first layer of titanium is formed on the insulator, and a layer of silicon is formed on the titanium. The silicon layer is masked and etched to form a silic

A process for forming a titanium silicide local interconnect between electrodes separated by a dielectric insulator on an integrated circuit. A first layer of titanium is formed on the insulator, and a layer of silicon is formed on the titanium. The silicon layer is masked and etched to form a silicon strip connecting the electrodes, and an overlying second layer of titanium is formed over the silicon strip. The titanium and silicon are heated to form nonsilicidized titanium over a strip of titanium silicide, and the nonsilicidized titanium is removed.

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A process for forming a metal silicide local interconnect between contact points separated by a dielectric insulator on an integrated circuit comprising: forming a first layer of metal on said insulator; forming a layer of silicon on said metal; masking and etching said silicon layer to form a silic

A process for forming a metal silicide local interconnect between contact points separated by a dielectric insulator on an integrated circuit comprising: forming a first layer of metal on said insulator; forming a layer of silicon on said metal; masking and etching said silicon layer to form a silicon strip connecting said contact points; forming an overlying second layer of metal; heating said metal and silicon to form a nonsilicidized metal over a strip of metal silicide; removing said nonsilicidized metal; and reheating said metal silicide strip after removing said nonsilicidized metal.