[특허]Electrostatic wafer clamp

Electrostatic wafer clamp 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H02N-013/00
출원번호	US-0383554 (1995-01-31)
발명자 / 주소	Frutiger William A. (Beverly MA)
출원인 / 주소	Varian Associates, Inc. (Palo Alto CA 02)
인용정보	피인용 횟수 : 62 인용 특허 : 0

초록 ▼

Apparatus for electrostatic clamping of a semiconductor wafer in a vacuum processing chamber wherein an ion beam is applied to the wafer. In a first embodiment, the apparatus includes an electrically conductive platen, a resilient, thermally-conductive dielectric layer affixed to the platen and one or more conductive wires positioned on the clamping surface. A clamping voltage is applied between the wires and the platen to firmly clamp the wafer against the clamping surface and depress the wires into the resilient dielectric layer. In a second embodiment, a three-phase wafer clamping apparatus includes a platen divided into three electrically isolated sections. One phase of a three-phase clamping voltage is connected to each of the platen sections. In the three-phase configuration, the wafer charging current is very small, and the clamping force is essentially constant. In a third embodiment, a six phase wafer clamping apparatus includes a platen having six symmetrically located electrodes. Voltages with six different phases are applied to the electrodes, with the voltages applied to electrodes on opposite sides of the platen being one-half cycle out of phase. The applied voltages are preferably bipolar square waves.

대표청구항 ▼

Apparatus for electrostatic clamping of a workpiece, comprising: a platen having a substantially circular, electrically insulating clamping surface for receiving a workpiece and at least six platen sectors each having a conductive electrode underlying and electrically isolated from said clamping surface said electrodes being configured in pairs symmetrically disposed about a center of said clamping surface, said clamping surface comprising a dielectric material selected to avoid sticking of the workpiece thereto after clamping; and clamping control means for applying AC voltages to said electrodes when clamping of the workpiece is desired, the workpiece being electrostatically clamped in a fixed position on said clamping surface when said AC voltages are applied to said electrodes, said clamping control means comprising means for generating at least six bipolar square wave voltages having relative phases of 0°, 60°, 120°, 180°, 240°and 300°, said square wave voltages defining a first set having phases 0°and 180°, a second set having phases 60°and 240°, and a third set having phases 120°and 300°each of said sets including positive and negative, equal amplitude, bipolar square wave voltages that are one half cycle out of phase, each of said bipolar square wave voltages having a predetermined switching speed selected to limit transients which could potentially damage the workpiece, and means for coupling said sets of square wave voltages to said Symmetrically disposed electrode pairs so as to provide symmetrical clamping of said workpiece to said clamping surface providing reliable high speed clamping with reduced risk of damage to said workpiece.

이 특허를 인용한 특허 (62)

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Qin,Shu; Kellerman,Peter L., Clamping and de-clamping semiconductor wafers on a J-R electrostatic chuck having a micromachined surface by using force delay in applying a single-phase square wave AC clamping voltage.
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Kellerman, Peter L.; Qin, Shu; DiVergilio, William F., Clamping and de-clamping semiconductor wafers on an electrostatic chuck using wafer inertial confinement by applying a single-phase square wave AC clamping voltage.
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Song, Yiping; Ferreira, Joao L G; Cooke, Michael, Electrostatic clamping method and apparatus.
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Ross Eric ; Park Jae ; de Chambrier Alexandre, Electrostatic support assembly having an integral ion focus ring.
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Mamoru Nakasuji JP, Electrostatic wafer chuck, and charged-particle-beam microlithography apparatus and methods comprising same.
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Larsen Grant Kenji, Electrostatic wafer clamp having low particulate contamination of wafers.
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Suuronen, David; Stone, Lyudmila; Blake, Julian; Stone, Dale K.; Cooke, Richard A.; Donnell, Steven; Venkatraman, Chandra, High conductivity electrostatic chuck.
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Burkhart Vincent E., Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck.
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Graven Andrew J. ; Schmidt Melvin ; McCuen Kenneth A. ; Ra Yunju, Method and apparatus for clamping a substrate.
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Peitzsch, Scott E., Method of platen fabrication to allow electrode pattern and gas cooling optimization.
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Radovanov,Svetlana B.; Macintosh,Edward; Ayers,Gary; Corey,Philip, Monitor system and method for semiconductor processes.
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Burkhart Vincent E. ; Harvey Stefanie E., Monopolar electrostatic chuck having an electrode in contact with a workpiece.
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Purohit,Ashwin M., Offset phase operation on a multiphase AC electrostatic clamp.
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Donde Arik ; Levinstein Hyman J. ; Wu Robert W. ; Hegedus Andreas ; Weldon Edwin C. ; Shamouilian Shamouil ; Clinton Jon T. ; Bedi Surinder S., Puncture resistant electrostatic chuck.
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Donde Arik ; Levinstein Hyman J. ; Wu Robert W. ; Hegedus Andreas ; Weldon Edwin C. ; Shamouilian Shamouil ; Clinton Jon T. ; Bedi Surinder S., Puncture resistant electrostatic chuck.
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Dolan Robert ; Cordts Bernhard ; Farley Marvin ; Ryding Geoffrey, SIMOX using controlled water vapor for oxygen implants.
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Dolan,Robert; Cordts,Bernhard; Farley,Marvin; Ryding,Geoffrey, SIMOX using controlled water vapor for oxygen implants.
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Moffatt, Stephen, Substrate holder for retaining a substrate within a processing chamber.
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Wang, You; Kholodenko, Arnold; Shamouilian, Shamouil; Veytser, Alexander M.; Cheng, Wing L., Substrate support tolerant to thermal expansion stresses.
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Dikran S. Babikian, Substrate thermal management system.
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Larsen, Grant Kenji, Surface structure and method of making, and electrostatic wafer clamp incorporating surface structure.
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England, Jonathan Gerald; Muka, Richard Stephen; Lischer, D. Jeffrey, Techniques for low-temperature ion implantation.
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England, Jonathan Gerald; Muka, Richard Stephen; Arevalo, Edwin A.; Fang, Ziwei; Singh, Vikram, Techniques for temperature-controlled ion implantation.
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Moslehi Mehrdad M., Thermally conductive chuck for vacuum processor.
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Moslehi, Mehrdad M., Thermally conductive chuck for vacuum processor.
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Blake, Julian; Stone, Dale K.; Stone, Lyudmila; Suuronen, David; Oshiro, Shigeo, Triboelectric charge controlled electrostatic clamp.
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Walther, Steven R., Wafer clamping apparatus and method.
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Theodore H. Smick ; Robert S. Andrews ; Bernhard F. Cordts, III, Wafer holding pin.
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